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IPD14N06S2-80-VB Product details
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IPD14N06S2-80-VB is an N-channel MOSFET in TO252 package, designed for medium voltage and current applications. Its maximum drain-source voltage (VDS) is 60V, and the gate-source voltage (VGS) can reach ±20V. This MOSFET uses Trench technology and has a relatively high on-resistance of 73mΩ at VGS=10V and 85mΩ at VGS=4.5V, while supporting a maximum drain current (ID) of 18A. The turn-on voltage (Vth) is 1.7V, which is suitable for operation at lower gate-source voltages. The design of IPD14N06S2-80-VB enables it to perform well in medium voltage and current applications.
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IPD14N06S2-80-VB is an N-channel MOSFET in TO252 package, designed for medium voltage and current applications. Its maximum drain-source voltage (VDS) is 60V, and the gate-source voltage (VGS) can reach ±20V. This MOSFET uses Trench technology and has a relatively high on-resistance of 73mΩ at VGS=10V and 85mΩ at VGS=4.5V, while supporting a maximum drain current (ID) of 18A. The turn-on voltage (Vth) is 1.7V, which is suitable for operation at lower gate-source voltages. The design of IPD14N06S2-80-VB enables it to perform well in medium voltage and current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench technology
- **Power consumption**: Moderate on-resistance, suitable for medium current applications
**
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench technology
- **Power consumption**: Moderate on-resistance, suitable for medium current applications
**
Domain and module applications：
：**
1. **Power Management Systems**: The IPD14N06S2-80-VB can be used in DC-DC converters and switching power supplies, especially in applications that need to handle medium currents and voltages. Its moderate on-resistance makes it suitable for power conversion scenarios, providing stable current switching while maintaining reasonable power consumption.
2. **Electric Vehicles**: In battery management systems and chargers for electric vehicles, this MOSFET can be used as a switching element to control the flow of current and ensure efficient operation of the system. Although its current capability is not as good as some high-power MOSFETs, it is still suitable for medium-power applications.
3. **Industrial Automation**: The IPD14N06S2-80-VB is suitable for power switches and control modules in industrial automation equipment. For example, in motor drives and control systems, this MOSFET can be used to control medium-power loads, helping to improve system reliability and efficiency.
4. **Consumer Electronics**: In consumer electronic devices, such as smart appliances and mobile devices, this MOSFET can be used in power management systems to provide stable switching control. Its moderate on-resistance and good current capability make it suitable for use in these devices.
With its good current handling capability and moderate on-resistance, the IPD14N06S2-80-VB is suitable for a variety of applications that require medium current and voltage management, providing a stable and efficient power switching solution.
1. **Power Management Systems**: The IPD14N06S2-80-VB can be used in DC-DC converters and switching power supplies, especially in applications that need to handle medium currents and voltages. Its moderate on-resistance makes it suitable for power conversion scenarios, providing stable current switching while maintaining reasonable power consumption.
2. **Electric Vehicles**: In battery management systems and chargers for electric vehicles, this MOSFET can be used as a switching element to control the flow of current and ensure efficient operation of the system. Although its current capability is not as good as some high-power MOSFETs, it is still suitable for medium-power applications.
3. **Industrial Automation**: The IPD14N06S2-80-VB is suitable for power switches and control modules in industrial automation equipment. For example, in motor drives and control systems, this MOSFET can be used to control medium-power loads, helping to improve system reliability and efficiency.
4. **Consumer Electronics**: In consumer electronic devices, such as smart appliances and mobile devices, this MOSFET can be used in power management systems to provide stable switching control. Its moderate on-resistance and good current capability make it suitable for use in these devices.
With its good current handling capability and moderate on-resistance, the IPD14N06S2-80-VB is suitable for a variety of applications that require medium current and voltage management, providing a stable and efficient power switching solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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