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IPD14N03LBG-VB Product details
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IPD14N03LBG-VB Product Introduction
IPD14N03LBG-VB is a high-performance N-channel power MOSFET packaged in TO252, designed for high-efficiency switching applications. It can withstand a drain-source voltage (VDS) of up to 30V and a gate-source voltage (VGS) of ±20V, suitable for medium and low voltage switching applications. The threshold voltage (Vth) of this MOSFET is 1.7V, allowing effective conduction at a relatively low gate voltage. IPD14N03LBG-VB uses advanced trench technology, and its on-resistance (RDS(ON)) under a 4.5V gate is 9mΩ, and it is further reduced to 7mΩ at a 10V gate voltage. This low on-resistance characteristic can effectively reduce power loss and improve the overall efficiency of the system. Its maximum drain current (ID) is 70A, enabling it to handle application requirements with higher current loads.
IPD14N03LBG-VB is a high-performance N-channel power MOSFET packaged in TO252, designed for high-efficiency switching applications. It can withstand a drain-source voltage (VDS) of up to 30V and a gate-source voltage (VGS) of ±20V, suitable for medium and low voltage switching applications. The threshold voltage (Vth) of this MOSFET is 1.7V, allowing effective conduction at a relatively low gate voltage. IPD14N03LBG-VB uses advanced trench technology, and its on-resistance (RDS(ON)) under a 4.5V gate is 9mΩ, and it is further reduced to 7mΩ at a 10V gate voltage. This low on-resistance characteristic can effectively reduce power loss and improve the overall efficiency of the system. Its maximum drain current (ID) is 70A, enabling it to handle application requirements with higher current loads.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter| Value| Unit|
|---------------------|---------------------|---------|
| Package| TO252 | - |
| Channel type| Single N-channel| - |
| Drain-source voltage (VDS) | 30 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 1.7 | V |
| On-resistance (RDS(ON)) | 9mΩ@VGS=4.5V | mΩ |
| On-resistance (RDS(ON)) | 7mΩ@VGS=10V | mΩ |
| Drain current (ID) | 70 | A |
| Technology type| Trench | - |
| Parameter| Value| Unit|
|---------------------|---------------------|---------|
| Package| TO252 | - |
| Channel type| Single N-channel| - |
| Drain-source voltage (VDS) | 30 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 1.7 | V |
| On-resistance (RDS(ON)) | 9mΩ@VGS=4.5V | mΩ |
| On-resistance (RDS(ON)) | 7mΩ@VGS=10V | mΩ |
| Drain current (ID) | 70 | A |
| Technology type| Trench | - |
Domain and module applications：
Application fields and modules
1. **Battery Management System (BMS)**: In the battery management system, the high current carrying capacity and low on-resistance of IPD14N03LBG-VB make it very suitable for battery switches and protection circuits. It can handle high current loads and ensure the safety and efficiency of the battery, suitable for applications in electric vehicles and high-performance battery packs.
2. **DC-DC Converter**: The low conduction loss characteristics of this MOSFET make it perform well in DC-DC converters. It can be used as a switching element to improve power conversion efficiency and reduce power loss. It is widely used in computer power supplies, communication equipment and other power modules.
3. **Automotive Electronic Systems**: In the field of automotive electronics, IPD14N03LBG-VB can be used for motor control and power switches. Its high current capability and low on-resistance enable it to cope with the load requirements of various electrical systems inside the car and improve the stability and reliability of the system.
4. **Home Appliances and Consumer Electronics**: This MOSFET is suitable for switch control of home appliances and consumer electronic devices, such as LED drivers, power management systems, etc. Its high efficiency and low power consumption characteristics enable it to provide stable performance and long service life in these applications.
IPD14N03LBG-VB is a high-efficiency, high-current MOSFET that can provide excellent performance in a variety of low and medium voltage applications. Its low on-resistance and high current carrying capacity enable it to perform well in battery management, power conversion, automotive electronics and home appliances.
1. **Battery Management System (BMS)**: In the battery management system, the high current carrying capacity and low on-resistance of IPD14N03LBG-VB make it very suitable for battery switches and protection circuits. It can handle high current loads and ensure the safety and efficiency of the battery, suitable for applications in electric vehicles and high-performance battery packs.
2. **DC-DC Converter**: The low conduction loss characteristics of this MOSFET make it perform well in DC-DC converters. It can be used as a switching element to improve power conversion efficiency and reduce power loss. It is widely used in computer power supplies, communication equipment and other power modules.
3. **Automotive Electronic Systems**: In the field of automotive electronics, IPD14N03LBG-VB can be used for motor control and power switches. Its high current capability and low on-resistance enable it to cope with the load requirements of various electrical systems inside the car and improve the stability and reliability of the system.
4. **Home Appliances and Consumer Electronics**: This MOSFET is suitable for switch control of home appliances and consumer electronic devices, such as LED drivers, power management systems, etc. Its high efficiency and low power consumption characteristics enable it to provide stable performance and long service life in these applications.
IPD14N03LBG-VB is a high-efficiency, high-current MOSFET that can provide excellent performance in a variety of low and medium voltage applications. Its low on-resistance and high current carrying capacity enable it to perform well in battery management, power conversion, automotive electronics and home appliances.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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