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IPD144N06N G-VB Product details
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1. IPD144N06N G-VB Product Introduction
IPD144N06N G-VB is a high-performance single N-channel MOSFET in TO252 package. This MOSFET adopts advanced Trench technology and provides excellent electrical performance. Its maximum drain-source voltage (VDS) is 60V, which is suitable for medium to high voltage switching applications. The threshold voltage (Vth) is 2.5V, ensuring stable conduction at a lower gate-source voltage. Its on-resistance (RDS(ON)) is 13mΩ at VGS=4.5V and 10mΩ at VGS=10V, which makes it have good power consumption performance under high current conditions. The maximum drain current (ID) is 58A, making it suitable for various application scenarios requiring high current handling.
IPD144N06N G-VB is a high-performance single N-channel MOSFET in TO252 package. This MOSFET adopts advanced Trench technology and provides excellent electrical performance. Its maximum drain-source voltage (VDS) is 60V, which is suitable for medium to high voltage switching applications. The threshold voltage (Vth) is 2.5V, ensuring stable conduction at a lower gate-source voltage. Its on-resistance (RDS(ON)) is 13mΩ at VGS=4.5V and 10mΩ at VGS=10V, which makes it have good power consumption performance under high current conditions. The maximum drain current (ID) is 58A, making it suitable for various application scenarios requiring high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD144N06N G-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON)）**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench MOSFET technology
- **Power dissipation**: Depends on the thermal resistance characteristics of the package
- **Switching speed**: High-speed switching capability, suitable for high-frequency applications
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON)）**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench MOSFET technology
- **Power dissipation**: Depends on the thermal resistance characteristics of the package
- **Switching speed**: High-speed switching capability, suitable for high-frequency applications
Domain and module applications：
III. Application Fields and Modules
1. **Power Conversion and Management**:
IPD144N06N G-VB excels in power conversion and management systems, especially in DC-DC converters and power switches. Due to its high withstand voltage capability (60V) and low on-resistance, this MOSFET is suitable for use in computer power supplies, power adapters, and industrial power modules to improve energy conversion efficiency and reduce power consumption.
2. **Motor Drive System**:
In motor drive systems, this MOSFET is capable of handling high current loads and is suitable for electric vehicle motor drives, industrial automation motor control, and household appliance motor drive modules. Its low on-resistance and high current capability ensure efficient operation and long life of the motor.
3. **Battery Management System (BMS)**:
IPD144N06N G-VB can be used for charge and discharge control in battery management systems, especially in scenarios that need to handle high currents and medium voltages. It is suitable for battery protection and management in electric vehicles, battery energy storage systems, and portable devices.
4. **LED lighting and drive circuits**:
This MOSFET is also suitable for LED lighting drive circuits, especially in high-power LED lighting applications that require high current and stability. Its low on-resistance helps reduce power consumption and improve system efficiency, and is suitable for high-brightness LED lighting systems and industrial lighting modules.
The high current handling capability and excellent electrical performance of the IPD144N06N G-VB make it widely used in these fields, especially in power management and current control systems that require high efficiency and high reliability.
1. **Power Conversion and Management**:
IPD144N06N G-VB excels in power conversion and management systems, especially in DC-DC converters and power switches. Due to its high withstand voltage capability (60V) and low on-resistance, this MOSFET is suitable for use in computer power supplies, power adapters, and industrial power modules to improve energy conversion efficiency and reduce power consumption.
2. **Motor Drive System**:
In motor drive systems, this MOSFET is capable of handling high current loads and is suitable for electric vehicle motor drives, industrial automation motor control, and household appliance motor drive modules. Its low on-resistance and high current capability ensure efficient operation and long life of the motor.
3. **Battery Management System (BMS)**:
IPD144N06N G-VB can be used for charge and discharge control in battery management systems, especially in scenarios that need to handle high currents and medium voltages. It is suitable for battery protection and management in electric vehicles, battery energy storage systems, and portable devices.
4. **LED lighting and drive circuits**:
This MOSFET is also suitable for LED lighting drive circuits, especially in high-power LED lighting applications that require high current and stability. Its low on-resistance helps reduce power consumption and improve system efficiency, and is suitable for high-brightness LED lighting systems and industrial lighting modules.
The high current handling capability and excellent electrical performance of the IPD144N06N G-VB make it widely used in these fields, especially in power management and current control systems that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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