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IPD13N03-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IPD13N03-VB is a high-performance single N-channel MOSFET, packaged in TO252, manufactured using Trench technology. This MOSFET is designed for high current and high efficiency applications and has excellent electrical performance. Its drain-source voltage is 30V, maximum current is 70A, and low on-resistance makes it perform well in electronic circuits that require high performance and high efficiency.
IPD13N03-VB is a high-performance single N-channel MOSFET, packaged in TO252, manufactured using Trench technology. This MOSFET is designed for high current and high efficiency applications and has excellent electrical performance. Its drain-source voltage is 30V, maximum current is 70A, and low on-resistance makes it perform well in electronic circuits that require high performance and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Rated current (ID)**: 70A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Rated current (ID)**: 70A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Application fields and module examples:
- **Power management**: The low on-resistance and high current handling capability of IPD13N03-VB make it very effective in power management systems. Suitable for DC-DC converters, switching power supplies and battery management systems, it can provide stable and efficient current handling in high-power applications.
- **Automotive electronics**: In the automotive field, this MOSFET can be used in the power system, motor drive and on-board power modules of electric vehicles to ensure stable operation under high current loads and improve the efficiency and reliability of automotive electrical systems.
- **Industrial applications**: IPD13N03-VB is suitable for modules such as industrial controllers, motor drives and power supply units. Its high current capability and low on-resistance ensure stability and high efficiency in industrial environments.
- **Consumer electronics**: In consumer electronics, this MOSFET is suitable for fast charging circuits, battery protection and load switches. Its high efficiency and low power consumption improve the performance and service life of electronic devices.
- **Communication Equipment**: IPD13N03-VB is also suitable for communication equipment, such as base station power supplies and power adapters. Its high current handling capability and low on-resistance ensure stable operation and efficient performance of communication equipment.
- **Power management**: The low on-resistance and high current handling capability of IPD13N03-VB make it very effective in power management systems. Suitable for DC-DC converters, switching power supplies and battery management systems, it can provide stable and efficient current handling in high-power applications.
- **Automotive electronics**: In the automotive field, this MOSFET can be used in the power system, motor drive and on-board power modules of electric vehicles to ensure stable operation under high current loads and improve the efficiency and reliability of automotive electrical systems.
- **Industrial applications**: IPD13N03-VB is suitable for modules such as industrial controllers, motor drives and power supply units. Its high current capability and low on-resistance ensure stability and high efficiency in industrial environments.
- **Consumer electronics**: In consumer electronics, this MOSFET is suitable for fast charging circuits, battery protection and load switches. Its high efficiency and low power consumption improve the performance and service life of electronic devices.
- **Communication Equipment**: IPD13N03-VB is also suitable for communication equipment, such as base station power supplies and power adapters. Its high current handling capability and low on-resistance ensure stable operation and efficient performance of communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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