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IPD13N03LAG-VB Product details
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IPD13N03LAG-VB is a high-performance N-channel MOSFET in a TO252 package designed for low to medium voltage and high current applications. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. This MOSFET uses Trench technology and has a low on-resistance of 7mΩ at VGS=10V and 9mΩ at VGS=4.5V, and can support a drain current (ID) of up to 70A. Its turn-on voltage (Vth) is 1.7V, allowing it to operate stably at lower gate-source voltages. The IPD13N03LAG-VB is suitable for applications that require high current and low power consumption, and can provide efficient power management and switching control.
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IPD13N03LAG-VB is a high-performance N-channel MOSFET in a TO252 package designed for low to medium voltage and high current applications. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. This MOSFET uses Trench technology and has a low on-resistance of 7mΩ at VGS=10V and 9mΩ at VGS=4.5V, and can support a drain current (ID) of up to 70A. Its turn-on voltage (Vth) is 1.7V, allowing it to operate stably at lower gate-source voltages. The IPD13N03LAG-VB is suitable for applications that require high current and low power consumption, and can provide efficient power management and switching control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench technology
- **Power consumption**: Low conduction loss, suitable for high-performance applications
**
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench technology
- **Power consumption**: Low conduction loss, suitable for high-performance applications
**
Domain and module applications：
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1. **Power Management System**: IPD13N03LAG-VB performs well in DC-DC converters, switching power supplies, and power management modules. Its low on-resistance and high current handling capability enable it to reduce power loss and improve system efficiency, especially for scenarios requiring high-efficiency power conversion.
2. **Electric Vehicle**: In the motor controller, charger, and battery management system of electric vehicles, this MOSFET can support high-current switching, provide efficient current management and protection functions, and improve the overall performance and reliability of electric vehicles.
3. **Industrial Automation**: IPD13N03LAG-VB is suitable for high-power switching in industrial automation equipment, such as motor drives, control systems, and power amplifiers. Its high current handling capability and low on-resistance ensure stable operation of the equipment under high load conditions, improving work efficiency and reliability.
4. **Consumer Electronics Devices**: In smart home appliances, mobile devices, and other consumer electronics, this MOSFET can be used in power management systems to optimize battery efficiency, provide efficient power switching control, and ensure long-term stability of the device.
With its excellent current handling capability and low on-resistance, IPD13N03LAG-VB is widely used in a variety of high-efficiency power management and switching applications, providing stable and efficient solutions for multiple fields.
1. **Power Management System**: IPD13N03LAG-VB performs well in DC-DC converters, switching power supplies, and power management modules. Its low on-resistance and high current handling capability enable it to reduce power loss and improve system efficiency, especially for scenarios requiring high-efficiency power conversion.
2. **Electric Vehicle**: In the motor controller, charger, and battery management system of electric vehicles, this MOSFET can support high-current switching, provide efficient current management and protection functions, and improve the overall performance and reliability of electric vehicles.
3. **Industrial Automation**: IPD13N03LAG-VB is suitable for high-power switching in industrial automation equipment, such as motor drives, control systems, and power amplifiers. Its high current handling capability and low on-resistance ensure stable operation of the equipment under high load conditions, improving work efficiency and reliability.
4. **Consumer Electronics Devices**: In smart home appliances, mobile devices, and other consumer electronics, this MOSFET can be used in power management systems to optimize battery efficiency, provide efficient power switching control, and ensure long-term stability of the device.
With its excellent current handling capability and low on-resistance, IPD13N03LAG-VB is widely used in a variety of high-efficiency power management and switching applications, providing stable and efficient solutions for multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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