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IPD135N08N3 G-VB Product details
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IPD135N08N3 G-VB MOSFET Product Introduction
The IPD135N08N3 G-VB is a high-performance single N-channel MOSFET in a TO252 package designed for high voltage and high current applications. The device features a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, combined with low on-resistance (RDS(ON)) and strong current handling capability, making it ideal for high power and high efficiency power management and load switching applications. The IPD135N08N3 G-VB uses advanced trench technology to provide excellent switching performance and low power consumption.
The IPD135N08N3 G-VB is a high-performance single N-channel MOSFET in a TO252 package designed for high voltage and high current applications. The device features a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, combined with low on-resistance (RDS(ON)) and strong current handling capability, making it ideal for high power and high efficiency power management and load switching applications. The IPD135N08N3 G-VB uses advanced trench technology to provide excellent switching performance and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 75A
- **Technology type**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 75A
- **Technology type**: Trench technology
Domain and module applications：
Applicable fields and application modules
The low on-resistance and high current capability of IPD135N08N3 G-VB MOSFET make it widely used in multiple fields:
1. **Power management**: In DC-DC converters, power factor correction (PFC) and power modules, the low RDS(ON) of IPD135N08N3 G-VB helps reduce energy loss and improve overall power efficiency, especially suitable for high-power power systems.
2. **Load switching**: This MOSFET performs well in load switching applications such as motor drives, switching power supplies and high-power load management. Its high current handling capability and low heat generation make it suitable for switching operations under high load conditions.
3. **Power tools and electric vehicles**: In the control systems of power tools and electric vehicles, IPD135N08N3 G-VB provides reliable current switching capabilities, supports high-power operation, optimizes battery management and equipment performance.
4. **Consumer Electronics**: In the battery management system of high-performance consumer electronics such as laptops and smartphones, this MOSFET can efficiently manage the battery charging and discharging process, improving the energy efficiency and service life of the device.
In summary, the IPD135N08N3 G-VB is widely used in power management systems and high-power load switch modules that require high efficiency and high performance due to its excellent current handling capability and low power consumption characteristics.
The low on-resistance and high current capability of IPD135N08N3 G-VB MOSFET make it widely used in multiple fields:
1. **Power management**: In DC-DC converters, power factor correction (PFC) and power modules, the low RDS(ON) of IPD135N08N3 G-VB helps reduce energy loss and improve overall power efficiency, especially suitable for high-power power systems.
2. **Load switching**: This MOSFET performs well in load switching applications such as motor drives, switching power supplies and high-power load management. Its high current handling capability and low heat generation make it suitable for switching operations under high load conditions.
3. **Power tools and electric vehicles**: In the control systems of power tools and electric vehicles, IPD135N08N3 G-VB provides reliable current switching capabilities, supports high-power operation, optimizes battery management and equipment performance.
4. **Consumer Electronics**: In the battery management system of high-performance consumer electronics such as laptops and smartphones, this MOSFET can efficiently manage the battery charging and discharging process, improving the energy efficiency and service life of the device.
In summary, the IPD135N08N3 G-VB is widely used in power management systems and high-power load switch modules that require high efficiency and high performance due to its excellent current handling capability and low power consumption characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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