中文
English
IPD135N03L G-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
IPD135N03L G-VB is a high-performance N-channel power MOSFET in TO252 package. Designed for low voltage applications, this MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) rating of ±20V. It uses advanced Trench technology to provide extremely low on-resistance (RDS(ON)) and up to 70A drain current (ID) handling capability. IPD135N03L G-VB is suitable for high-efficiency power switching and power management applications, especially in applications requiring high switching speed and low conduction loss.
IPD135N03L G-VB is a high-performance N-channel power MOSFET in TO252 package. Designed for low voltage applications, this MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) rating of ±20V. It uses advanced Trench technology to provide extremely low on-resistance (RDS(ON)) and up to 70A drain current (ID) handling capability. IPD135N03L G-VB is suitable for high-efficiency power switching and power management applications, especially in applications requiring high switching speed and low conduction loss.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Parameter Description
- **Package: ** TO252
- **Configuration: ** Single-N-Channel
- **Drain-Source Voltage (VDS): ** 30V
- **Gate-Source Voltage (VGS): ** ±20V
- **Threshold Voltage (Vth): ** 1.7V
- **On-Resistance (RDS(ON)): **
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain Current (ID): ** 70A
- **Technology: ** Trench Technology
- **Power Dissipation (Ptot): ** 62W
- **Operating Temperature Range (Tj): ** -55°C Up to 150°C
- **Package: ** TO252
- **Configuration: ** Single-N-Channel
- **Drain-Source Voltage (VDS): ** 30V
- **Gate-Source Voltage (VGS): ** ±20V
- **Threshold Voltage (Vth): ** 1.7V
- **On-Resistance (RDS(ON)): **
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain Current (ID): ** 70A
- **Technology: ** Trench Technology
- **Power Dissipation (Ptot): ** 62W
- **Operating Temperature Range (Tj): ** -55°C Up to 150°C
Domain and module applications：
3. Applications and modules
The high performance characteristics of IPD135N03L G-VB MOSFET make it suitable for the following fields and modules:
- **Switching Power Supply (SMPS):** In high-efficiency switching power supplies, IPD135N03L G-VB can be used as the main switching element. Its low on-resistance and high current capability help improve power conversion efficiency, suitable for high power density DC-DC converters and other power management applications.
- **Motor Drive:** In motor drive systems, such as stepper motors and DC motor drives, the high current capability and low on-resistance of this MOSFET can improve the efficiency and control accuracy of the motor, making it excel in automation equipment and robotics.
- **Automotive Electronics:** IPD135N03L G-VB is suitable for high-efficiency switching applications in automotive electronic systems, such as power windows, seat adjustments, and power door locks. Its high current handling capability and low on-resistance can effectively improve the performance and reliability of automotive electronic systems.
- **Battery Management System (BMS):** In battery management systems, MOSFETs can be used as battery protection switches. Their low on-resistance helps reduce power loss, improve battery safety and overall system efficiency.
- **Electric Vehicle (EV) Charger:** The IPD135N03L G-VB can efficiently handle current in electric vehicle charging systems, support fast charging applications, and ensure high efficiency and stability during the charging process.
The excellent performance of the IPD135N03L G-VB MOSFET makes it an ideal choice for low-voltage, high-current applications, especially in electronic systems that require high switching speeds and low power losses.
The high performance characteristics of IPD135N03L G-VB MOSFET make it suitable for the following fields and modules:
- **Switching Power Supply (SMPS):** In high-efficiency switching power supplies, IPD135N03L G-VB can be used as the main switching element. Its low on-resistance and high current capability help improve power conversion efficiency, suitable for high power density DC-DC converters and other power management applications.
- **Motor Drive:** In motor drive systems, such as stepper motors and DC motor drives, the high current capability and low on-resistance of this MOSFET can improve the efficiency and control accuracy of the motor, making it excel in automation equipment and robotics.
- **Automotive Electronics:** IPD135N03L G-VB is suitable for high-efficiency switching applications in automotive electronic systems, such as power windows, seat adjustments, and power door locks. Its high current handling capability and low on-resistance can effectively improve the performance and reliability of automotive electronic systems.
- **Battery Management System (BMS):** In battery management systems, MOSFETs can be used as battery protection switches. Their low on-resistance helps reduce power loss, improve battery safety and overall system efficiency.
- **Electric Vehicle (EV) Charger:** The IPD135N03L G-VB can efficiently handle current in electric vehicle charging systems, support fast charging applications, and ensure high efficiency and stability during the charging process.
The excellent performance of the IPD135N03L G-VB MOSFET makes it an ideal choice for low-voltage, high-current applications, especially in electronic systems that require high switching speeds and low power losses.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
