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IPD12CNE8N G-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IPD12CNE8N G-VB is a high-performance single-channel N-type power MOSFET in TO252 package. The device uses advanced trench technology to provide excellent conduction performance and high current handling capability. Its maximum drain-source voltage is 80V, which can work stably in high voltage environments. The MOSFET has a very low on-resistance of 5mΩ, allowing it to maintain high efficiency at high currents, and the rated drain current can reach 75A, making it an ideal choice for high power applications.
IPD12CNE8N G-VB is a high-performance single-channel N-type power MOSFET in TO252 package. The device uses advanced trench technology to provide excellent conduction performance and high current handling capability. Its maximum drain-source voltage is 80V, which can work stably in high voltage environments. The MOSFET has a very low on-resistance of 5mΩ, allowing it to maintain high efficiency at high currents, and the rated drain current can reach 75A, making it an ideal choice for high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ@VGS=10V
- **Drain current (ID)**: 75A
- **Technology type**: Trench MOSFET
- **Switching speed**: Fast
- **Power consumption**: Low power design, suitable for efficient power management applications
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ@VGS=10V
- **Drain current (ID)**: 75A
- **Technology type**: Trench MOSFET
- **Switching speed**: Fast
- **Power consumption**: Low power design, suitable for efficient power management applications
Domain and module applications：
III. Application fields and module description:
1. **High-power DC-DC converter**:
IPD12CNE8N G-VB is suitable for switching elements in high-power DC-DC converters. Its low on-resistance and high current handling capability enable the converter to have excellent energy efficiency under high load conditions. This is especially important in power supplies, server power supplies and high-power power management systems.
2. **Industrial motor control**:
In industrial applications, such as motor drive systems, IPD12CNE8N G-VB can be used as a key switching element in motor control modules. Its high current carrying capacity and low heat generation characteristics ensure efficient and stable operation of the motor, suitable for high-load and high-performance motor control scenarios.
3. **Automotive electrical system**:
This MOSFET also performs well in automotive electronic systems, such as electric power steering (EPS), electric windows and lighting control. Its high current handling capability and stability enable it to maintain reliability and safety in high-load operation of the car.
4. **Battery Management System**:
IPD12CNE8N G-VB is also widely used in battery management systems (BMS), especially in electric vehicles and energy storage systems. During the charging and discharging process, this MOSFET can efficiently control the current, reduce power loss, and improve the overall performance and reliability of the battery system.
1. **High-power DC-DC converter**:
IPD12CNE8N G-VB is suitable for switching elements in high-power DC-DC converters. Its low on-resistance and high current handling capability enable the converter to have excellent energy efficiency under high load conditions. This is especially important in power supplies, server power supplies and high-power power management systems.
2. **Industrial motor control**:
In industrial applications, such as motor drive systems, IPD12CNE8N G-VB can be used as a key switching element in motor control modules. Its high current carrying capacity and low heat generation characteristics ensure efficient and stable operation of the motor, suitable for high-load and high-performance motor control scenarios.
3. **Automotive electrical system**:
This MOSFET also performs well in automotive electronic systems, such as electric power steering (EPS), electric windows and lighting control. Its high current handling capability and stability enable it to maintain reliability and safety in high-load operation of the car.
4. **Battery Management System**:
IPD12CNE8N G-VB is also widely used in battery management systems (BMS), especially in electric vehicles and energy storage systems. During the charging and discharging process, this MOSFET can efficiently control the current, reduce power loss, and improve the overall performance and reliability of the battery system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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