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IPD127N06L G-VB Product details
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IPD127N06L G-VB is a high performance single N-channel MOSFET in TO252 package type. This MOSFET is manufactured using the Trench process, providing excellent conduction characteristics and high current handling capabilities. It is designed to handle high voltage and high current applications, with a drain-source voltage of 60V and a continuous drain current of 58A. The low on-resistance of the IPD127N06L G-VB enables it to excel in high-efficiency energy conversion and switching applications, making it an ideal choice for efficient power management systems.
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**IPD127N06L G-VB
IPD127N06L G-VB is a high performance single N-channel MOSFET in TO252 package type. This MOSFET is manufactured using the Trench process, providing excellent conduction characteristics and high current handling capabilities. It is designed to handle high voltage and high current applications, with a drain-source voltage of 60V and a continuous drain current of 58A. The low on-resistance of the IPD127N06L G-VB enables it to excel in high-efficiency energy conversion and switching applications, making it an ideal choice for efficient power management systems.
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**IPD127N06L G-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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- **Package Type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 60V
- **Gate Drive Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Continuous Drain Current (ID)**: 58A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 175°C
- **Switching Performance**:
- High switching speed for high frequency applications.
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**IPD127N06L G-VB
- **Package Type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 60V
- **Gate Drive Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Continuous Drain Current (ID)**: 58A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 175°C
- **Switching Performance**:
- High switching speed for high frequency applications.
---
**IPD127N06L G-VB
Domain and module applications：
**
1. **Power Management System**: IPD127N06L G-VB MOSFET is widely used in efficient power management systems such as DC-DC converters and switching power modules. Its low on-resistance and high current carrying capacity can effectively reduce energy loss and improve power conversion efficiency, making it suitable for use in high-power power solutions.
2. **Automotive Electronics**: In automotive electronic systems such as battery management systems and electric power steering systems, the high current handling capability and low power consumption characteristics of IPD127N06L G-VB are very suitable. It can provide stable performance in harsh automotive environments, ensuring system reliability and efficiency.
3. **Industrial Equipment**: In the industrial field, IPD127N06L G-VB can be used in motor drives, industrial power supplies and other high-power devices. Its low on-resistance and high current capability can support the stable operation of these devices under high loads, reduce heat and improve the overall efficiency of the system.
4. **Consumer Electronics**: This MOSFET is also suitable for consumer electronic devices such as battery charging modules and power adapters. Its fast switching characteristics and low power consumption can improve charging efficiency, ensure the stability and reliability of electronic devices, and meet the high-efficiency requirements of modern electronic products.
1. **Power Management System**: IPD127N06L G-VB MOSFET is widely used in efficient power management systems such as DC-DC converters and switching power modules. Its low on-resistance and high current carrying capacity can effectively reduce energy loss and improve power conversion efficiency, making it suitable for use in high-power power solutions.
2. **Automotive Electronics**: In automotive electronic systems such as battery management systems and electric power steering systems, the high current handling capability and low power consumption characteristics of IPD127N06L G-VB are very suitable. It can provide stable performance in harsh automotive environments, ensuring system reliability and efficiency.
3. **Industrial Equipment**: In the industrial field, IPD127N06L G-VB can be used in motor drives, industrial power supplies and other high-power devices. Its low on-resistance and high current capability can support the stable operation of these devices under high loads, reduce heat and improve the overall efficiency of the system.
4. **Consumer Electronics**: This MOSFET is also suitable for consumer electronic devices such as battery charging modules and power adapters. Its fast switching characteristics and low power consumption can improve charging efficiency, ensure the stability and reliability of electronic devices, and meet the high-efficiency requirements of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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