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IPD122N10N3 G-VB Product details
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1. IPD122N10N3 G-VB Product Introduction
IPD122N10N3 G-VB is a high-performance N-channel MOSFET packaged in TO252 and adopts advanced Trench technology. The device can withstand a drain-source voltage (VDS) of up to 100V and a maximum drain current (ID) of 85A, and is designed to meet the needs of high voltage and high current applications. IPD122N10N3 G-VB provides a low on-resistance (RDS(ON)) of 10.5mΩ at VGS=4.5V and 8.5mΩ at VGS=10V, which means it can significantly reduce power consumption and heat during switching, thereby improving the efficiency and reliability of the overall system.
IPD122N10N3 G-VB is a high-performance N-channel MOSFET packaged in TO252 and adopts advanced Trench technology. The device can withstand a drain-source voltage (VDS) of up to 100V and a maximum drain current (ID) of 85A, and is designed to meet the needs of high voltage and high current applications. IPD122N10N3 G-VB provides a low on-resistance (RDS(ON)) of 10.5mΩ at VGS=4.5V and 8.5mΩ at VGS=10V, which means it can significantly reduce power consumption and heat during switching, thereby improving the efficiency and reliability of the overall system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | 8.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of IPD122N10N3 G-VB
| **Parameter** | **Value** |
|---------------------------|----------------------------------|
| **Package** | TO252 |
| **Channel type** | Single N-channel (Single-N) |
| **Drain-source voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throughput (Vth)** | 2.5V |
| **On-resistance RDS(ON)** | 10.5mΩ @ VGS=4.5V；8.5mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 85A |
| **Technology** | Trench (trench technology) |
IPD122N10N3 G-VB With excellent high voltage tolerance and low on-resistance, it is very suitable for applications requiring high efficiency and high power.
| **Parameter** | **Value** |
|---------------------------|----------------------------------|
| **Package** | TO252 |
| **Channel type** | Single N-channel (Single-N) |
| **Drain-source voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throughput (Vth)** | 2.5V |
| **On-resistance RDS(ON)** | 10.5mΩ @ VGS=4.5V；8.5mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 85A |
| **Technology** | Trench (trench technology) |
IPD122N10N3 G-VB With excellent high voltage tolerance and low on-resistance, it is very suitable for applications requiring high efficiency and high power.
Domain and module applications：
III. Application fields and module examples of IPD122N10N3 G-VB
1. **High-power DC-DC converter**:
In high-power DC-DC converters, IPD122N10N3 G-VB can be used as a switching element. Due to its high voltage tolerance and low on-resistance, this MOSFET can improve the efficiency of the converter and reduce energy loss during switching, and is suitable for power conversion tasks that require high current and high voltage.
2. **Electric vehicle battery management system**:
In the battery management system of electric vehicles, IPD122N10N3 G-VB is suitable for battery charge and discharge control. Its high current carrying capacity and low on-resistance help optimize battery charging efficiency and discharge stability, and improve the overall performance and endurance of electric vehicles.
3. **Power adapter and fast charger**:
This MOSFET is also very suitable for high-power power adapters and fast chargers. Low on-resistance can reduce energy loss and improve efficiency of adapters and chargers, especially in applications that require fast charging.
4. **Industrial Power Management Module**:
In industrial power management modules, IPD122N10N3 G-VB can be used for high-power drive and power conversion applications. Its excellent current carrying capacity and high voltage tolerance can ensure the stability and reliability of the module under high load conditions.
1. **High-power DC-DC converter**:
In high-power DC-DC converters, IPD122N10N3 G-VB can be used as a switching element. Due to its high voltage tolerance and low on-resistance, this MOSFET can improve the efficiency of the converter and reduce energy loss during switching, and is suitable for power conversion tasks that require high current and high voltage.
2. **Electric vehicle battery management system**:
In the battery management system of electric vehicles, IPD122N10N3 G-VB is suitable for battery charge and discharge control. Its high current carrying capacity and low on-resistance help optimize battery charging efficiency and discharge stability, and improve the overall performance and endurance of electric vehicles.
3. **Power adapter and fast charger**:
This MOSFET is also very suitable for high-power power adapters and fast chargers. Low on-resistance can reduce energy loss and improve efficiency of adapters and chargers, especially in applications that require fast charging.
4. **Industrial Power Management Module**:
In industrial power management modules, IPD122N10N3 G-VB can be used for high-power drive and power conversion applications. Its excellent current carrying capacity and high voltage tolerance can ensure the stability and reliability of the module under high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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