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IPD110N12N3 G-VB Product details
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IPD110N12N3 G-VB Product Introduction
IPD110N12N3 G-VB is a high-performance N-channel power MOSFET packaged in TO252. It has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, suitable for high-voltage switching applications. Its threshold voltage (Vth) is 2.5V, and it can be turned on at a relatively low gate voltage. This MOSFET uses advanced trench technology, with an on-resistance (RDS(ON)) of 10.5mΩ at a 4.5V gate drive, and drops to 8.5mΩ at a 10V gate voltage, which shows that it has the advantage of low power consumption in high-current applications. The maximum drain current (ID) is 85A, enabling it to cope with application scenarios with high power requirements.
IPD110N12N3 G-VB is a high-performance N-channel power MOSFET packaged in TO252. It has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, suitable for high-voltage switching applications. Its threshold voltage (Vth) is 2.5V, and it can be turned on at a relatively low gate voltage. This MOSFET uses advanced trench technology, with an on-resistance (RDS(ON)) of 10.5mΩ at a 4.5V gate drive, and drops to 8.5mΩ at a 10V gate voltage, which shows that it has the advantage of low power consumption in high-current applications. The maximum drain current (ID) is 85A, enabling it to cope with application scenarios with high power requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | 8.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter| Value| Unit|
|---------------------|---------------------|---------|
| Package| TO252 | - |
| Channel type| Single N-channel| - |
| Drain-source voltage (VDS) | 100 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 2.5 | V |
| On-resistance (RDS(ON)) | 10.5mΩ@VGS=4.5V | mΩ |
| On-resistance (RDS(ON)) | 8.5mΩ@VGS=10V | mΩ |
| Drain current (ID) | 85 | A |
| Technology type| Trench | - |
| Parameter| Value| Unit|
|---------------------|---------------------|---------|
| Package| TO252 | - |
| Channel type| Single N-channel| - |
| Drain-source voltage (VDS) | 100 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 2.5 | V |
| On-resistance (RDS(ON)) | 10.5mΩ@VGS=4.5V | mΩ |
| On-resistance (RDS(ON)) | 8.5mΩ@VGS=10V | mΩ |
| Drain current (ID) | 85 | A |
| Technology type| Trench | - |
Domain and module applications：
Applications and modules
1. **Power management system**: The high voltage tolerance and low on-resistance of IPD110N12N3 G-VB make it very suitable for use in power management systems. For example, in an efficient DC-DC converter, it can be used as a main switch to help improve power conversion efficiency and reduce power consumption.
2. **Electric vehicles**: In electric vehicles, the high current capability and high voltage carrying capacity of this MOSFET make it very suitable for battery management systems (BMS) and motor drive modules. It can handle high loads and high voltage applications, ensuring the stability and performance of electric vehicle systems.
3. **Industrial power supply**: IPD110N12N3 G-VB can be used in a variety of industrial power applications, such as high-power power modules and inverters. Its high current carrying capacity and low on-resistance ensure high efficiency and long life in industrial automation equipment.
4. **High-voltage switching applications**: Due to its high drain-source voltage characteristics, this MOSFET is suitable for switching applications that need to handle high voltages, such as high-voltage power switches and high-voltage power management systems. This high voltage tolerance can support complex power architectures and high-voltage operating environments.
The IPD110N12N3 G-VB is a high-performance, high-voltage MOSFET suitable for a variety of demanding power and switching applications. Its low on-resistance and high current capability make it excellent in power management, electric vehicles, industrial power supplies and high-voltage switching applications.
1. **Power management system**: The high voltage tolerance and low on-resistance of IPD110N12N3 G-VB make it very suitable for use in power management systems. For example, in an efficient DC-DC converter, it can be used as a main switch to help improve power conversion efficiency and reduce power consumption.
2. **Electric vehicles**: In electric vehicles, the high current capability and high voltage carrying capacity of this MOSFET make it very suitable for battery management systems (BMS) and motor drive modules. It can handle high loads and high voltage applications, ensuring the stability and performance of electric vehicle systems.
3. **Industrial power supply**: IPD110N12N3 G-VB can be used in a variety of industrial power applications, such as high-power power modules and inverters. Its high current carrying capacity and low on-resistance ensure high efficiency and long life in industrial automation equipment.
4. **High-voltage switching applications**: Due to its high drain-source voltage characteristics, this MOSFET is suitable for switching applications that need to handle high voltages, such as high-voltage power switches and high-voltage power management systems. This high voltage tolerance can support complex power architectures and high-voltage operating environments.
The IPD110N12N3 G-VB is a high-performance, high-voltage MOSFET suitable for a variety of demanding power and switching applications. Its low on-resistance and high current capability make it excellent in power management, electric vehicles, industrial power supplies and high-voltage switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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