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IPD10N03LAG-VB Product details
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1. IPD10N03LAG-VB Product Introduction
IPD10N03LAG-VB is a high-performance single N-channel MOSFET in TO252 package. It is designed based on Trench technology and has excellent current handling capability and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and the maximum gate-source voltage (VGS) is ±20V, ensuring its stable operation under various voltage conditions. Its threshold voltage (Vth) is 1.7V, allowing good conduction performance at a lower gate drive voltage. With an on-resistance of 9mΩ (RDS(ON)@VGS=4.5V) and 7mΩ (RDS(ON)@VGS=10V), as well as a drain current handling capability of up to 70A, it is very suitable for applications with high efficiency and high current requirements.
IPD10N03LAG-VB is a high-performance single N-channel MOSFET in TO252 package. It is designed based on Trench technology and has excellent current handling capability and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and the maximum gate-source voltage (VGS) is ±20V, ensuring its stable operation under various voltage conditions. Its threshold voltage (Vth) is 1.7V, allowing good conduction performance at a lower gate drive voltage. With an on-resistance of 9mΩ (RDS(ON)@VGS=4.5V) and 7mΩ (RDS(ON)@VGS=10V), as well as a drain current handling capability of up to 70A, it is very suitable for applications with high efficiency and high current requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. IPD10N03LAG-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
- **Thermal resistance (RθJA)**: 62°C/W
- **Gate charge (Qg)**: 110nC
- **Switching time**:
- Turn-on time (ton): 16ns
- Turn-off time (toff): 50ns
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
- **Thermal resistance (RθJA)**: 62°C/W
- **Gate charge (Qg)**: 110nC
- **Switching time**:
- Turn-on time (ton): 16ns
- Turn-off time (toff): 50ns
Domain and module applications：
III. Application fields and modules of IPD10N03LAG-VB
1. **Power management system**
The low on-resistance and high current handling capability of IPD10N03LAG-VB make it very suitable for power management systems, such as power converters and battery management modules. It can effectively reduce power consumption and improve system efficiency, especially in applications with high current demand.
2. **Electric vehicles**
In the power management and drive systems of electric vehicles (EV) and hybrid vehicles, this MOSFET provides efficient current control. It can be used in battery management systems, motor drive modules and charging control systems to help improve the overall performance and energy efficiency of the vehicle.
3. **Computer and server power supplies**
IPD10N03LAG-VB is suitable for power modules in computers and servers, such as power supply units (PSUs) and DC-DC converters. Its high current handling capability and low RDS(ON) can improve the stability and efficiency of power modules and meet the needs of high-performance computing devices.
4. **Consumer Electronics Devices**
In various consumer electronics products, such as smartphones, tablets and portable devices, the low on-resistance and high current handling capability of this MOSFET can be used to optimize power switching and regulation circuits, enhancing the battery life and overall performance of the device.
1. **Power management system**
The low on-resistance and high current handling capability of IPD10N03LAG-VB make it very suitable for power management systems, such as power converters and battery management modules. It can effectively reduce power consumption and improve system efficiency, especially in applications with high current demand.
2. **Electric vehicles**
In the power management and drive systems of electric vehicles (EV) and hybrid vehicles, this MOSFET provides efficient current control. It can be used in battery management systems, motor drive modules and charging control systems to help improve the overall performance and energy efficiency of the vehicle.
3. **Computer and server power supplies**
IPD10N03LAG-VB is suitable for power modules in computers and servers, such as power supply units (PSUs) and DC-DC converters. Its high current handling capability and low RDS(ON) can improve the stability and efficiency of power modules and meet the needs of high-performance computing devices.
4. **Consumer Electronics Devices**
In various consumer electronics products, such as smartphones, tablets and portable devices, the low on-resistance and high current handling capability of this MOSFET can be used to optimize power switching and regulation circuits, enhancing the battery life and overall performance of the device.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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