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IPD10N03B-VB Product details
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1. IPD10N03B-VB Product Introduction
IPD10N03B-VB is a high-performance single N-channel MOSFET in TO252 package. Using advanced Trench technology, this MOSFET has excellent conductivity and switching performance. Its maximum drain-source voltage (VDS) is 30V, which is suitable for low-voltage power switching applications. The threshold voltage (Vth) is 1.7V, ensuring effective conduction at a lower gate-source voltage. Its on-resistance (RDS(ON)) is 9mΩ at VGS=4.5V, and drops to 7mΩ at VGS=10V, providing excellent low-power performance. With a maximum drain current (ID) of up to 70A, it performs stably in applications that require high current handling.
IPD10N03B-VB is a high-performance single N-channel MOSFET in TO252 package. Using advanced Trench technology, this MOSFET has excellent conductivity and switching performance. Its maximum drain-source voltage (VDS) is 30V, which is suitable for low-voltage power switching applications. The threshold voltage (Vth) is 1.7V, ensuring effective conduction at a lower gate-source voltage. Its on-resistance (RDS(ON)) is 9mΩ at VGS=4.5V, and drops to 7mΩ at VGS=10V, providing excellent low-power performance. With a maximum drain current (ID) of up to 70A, it performs stably in applications that require high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD10N03B-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench MOSFET technology
- **Power dissipation**: Depends on the thermal resistance characteristics of the package
- **Switching speed**: High-speed switching capability, suitable for high-frequency applications
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench MOSFET technology
- **Power dissipation**: Depends on the thermal resistance characteristics of the package
- **Switching speed**: High-speed switching capability, suitable for high-frequency applications
Domain and module applications：
III. Application Fields and Modules
1. **Power Management System**:
IPD10N03B-VB performs well in power management systems, especially in DC-DC converters. Its low on-resistance and high current handling capability make it an ideal choice in power modules, such as computer power supplies, server power supplies, and power adapters, which can effectively improve energy conversion efficiency and reduce power consumption.
2. **Motor Drive Control**:
In motor drive control systems, this MOSFET can effectively handle high current loads and is suitable for electric vehicle motor drives, motor control modules for household appliances, and motor control systems in industrial automation. Its low on-resistance helps improve motor drive efficiency and reduce energy losses.
3. **Battery Management System (BMS)**:
IPD10N03B-VB is suitable for current control and protection functions in battery management systems. Its high current capability and low power consumption make it excellent in the protection and charge and discharge management of lithium battery packs, and is widely used in electric vehicles and high-performance battery packs.
4. **LED lighting driver**:
This MOSFET can also be used in LED lighting driver circuits, especially in LED applications that require high current and low power consumption. Its efficient switching performance and low on-resistance ensure stable and efficient operation of high-brightness LED lighting systems.
The superior electrical characteristics of the IPD10N03B-VB enable it to play a key role in these applications, ensuring efficient, reliable performance and low power consumption.
1. **Power Management System**:
IPD10N03B-VB performs well in power management systems, especially in DC-DC converters. Its low on-resistance and high current handling capability make it an ideal choice in power modules, such as computer power supplies, server power supplies, and power adapters, which can effectively improve energy conversion efficiency and reduce power consumption.
2. **Motor Drive Control**:
In motor drive control systems, this MOSFET can effectively handle high current loads and is suitable for electric vehicle motor drives, motor control modules for household appliances, and motor control systems in industrial automation. Its low on-resistance helps improve motor drive efficiency and reduce energy losses.
3. **Battery Management System (BMS)**:
IPD10N03B-VB is suitable for current control and protection functions in battery management systems. Its high current capability and low power consumption make it excellent in the protection and charge and discharge management of lithium battery packs, and is widely used in electric vehicles and high-performance battery packs.
4. **LED lighting driver**:
This MOSFET can also be used in LED lighting driver circuits, especially in LED applications that require high current and low power consumption. Its efficient switching performance and low on-resistance ensure stable and efficient operation of high-brightness LED lighting systems.
The superior electrical characteristics of the IPD10N03B-VB enable it to play a key role in these applications, ensuring efficient, reliable performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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