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IPD105N04L G-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IPD105N04L G-VB is a high-performance single N-channel MOSFET packaged in TO252. This MOSFET uses advanced Trench technology, has low on-resistance and high current handling capability, and is suitable for high-performance circuit applications. With a drain-source voltage (VDS) of 40V and a rated current (ID) of 85A, it performs well in situations requiring high efficiency and high power.
IPD105N04L G-VB is a high-performance single N-channel MOSFET packaged in TO252. This MOSFET uses advanced Trench technology, has low on-resistance and high current handling capability, and is suitable for high-performance circuit applications. With a drain-source voltage (VDS) of 40V and a rated current (ID) of 85A, it performs well in situations requiring high efficiency and high power.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Rated current (ID)**: 85A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Rated current (ID)**: 85A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Application fields and module examples:
- **Power management**: The low on-resistance and high current capability of IPD105N04L G-VB make it an excellent performer in power management systems. It is suitable for efficient DC-DC converters, power switches and battery management systems, providing stable current and efficient energy conversion, improving the overall performance of the system.
- **Automotive electronics**: In the automotive field, this MOSFET can be used in the power system, motor drive module and on-board power management of electric vehicles to ensure stable operation under high current loads and improve the reliability and efficiency of automotive electrical systems.
- **Industrial applications**: The IPD105N04L G-VB is suitable for a variety of industrial power modules, including motor drives, industrial controllers and high-power power supply units. Its high current handling capability and low on-resistance enable it to work reliably in harsh industrial environments.
- **Consumer electronics**: In consumer electronics, this MOSFET is suitable for fast charging circuits, battery protection and high-power switching applications. It can improve the energy efficiency and service life of equipment, meeting the high performance and high efficiency requirements of modern electronic devices.
- **Communication Equipment**: In communication infrastructure, the high current handling capability and low on-resistance of the IPD105N04L G-VB make it ideal for base station power supplies, power adapters, and other high-power communication equipment, ensuring stable power supply and efficient operation.
- **Power management**: The low on-resistance and high current capability of IPD105N04L G-VB make it an excellent performer in power management systems. It is suitable for efficient DC-DC converters, power switches and battery management systems, providing stable current and efficient energy conversion, improving the overall performance of the system.
- **Automotive electronics**: In the automotive field, this MOSFET can be used in the power system, motor drive module and on-board power management of electric vehicles to ensure stable operation under high current loads and improve the reliability and efficiency of automotive electrical systems.
- **Industrial applications**: The IPD105N04L G-VB is suitable for a variety of industrial power modules, including motor drives, industrial controllers and high-power power supply units. Its high current handling capability and low on-resistance enable it to work reliably in harsh industrial environments.
- **Consumer electronics**: In consumer electronics, this MOSFET is suitable for fast charging circuits, battery protection and high-power switching applications. It can improve the energy efficiency and service life of equipment, meeting the high performance and high efficiency requirements of modern electronic devices.
- **Communication Equipment**: In communication infrastructure, the high current handling capability and low on-resistance of the IPD105N04L G-VB make it ideal for base station power supplies, power adapters, and other high-power communication equipment, ensuring stable power supply and efficient operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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