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IPD105N03L G-VB Product details
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IPD105N03L G-VB is a high-performance N-channel MOSFET in TO252 package, designed for medium and low voltage and high current applications. The MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. It uses advanced Trench technology, has a low on-resistance of 5mΩ at VGS=10V and 6mΩ at VGS=4.5V, and supports a drain current (ID) of up to 80A. Its turn-on voltage (Vth) is 1.7V, ensuring stable operation even at lower gate-source voltages. These features make the IPD105N03L G-VB very suitable for application scenarios that require high current and low power consumption.
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IPD105N03L G-VB is a high-performance N-channel MOSFET in TO252 package, designed for medium and low voltage and high current applications. The MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. It uses advanced Trench technology, has a low on-resistance of 5mΩ at VGS=10V and 6mΩ at VGS=4.5V, and supports a drain current (ID) of up to 80A. Its turn-on voltage (Vth) is 1.7V, ensuring stable operation even at lower gate-source voltages. These features make the IPD105N03L G-VB very suitable for application scenarios that require high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology**: Trench technology
- **Power consumption**: Low conduction loss, suitable for high-performance applications
**
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology**: Trench technology
- **Power consumption**: Low conduction loss, suitable for high-performance applications
**
Domain and module applications：
：**
1. **Power Management System**: IPD105N03L G-VB is ideal for use in DC-DC converters, switching power supplies, and power management modules. Its low on-resistance and high current handling capability enable it to effectively reduce power loss and improve the energy efficiency of the system, especially suitable for applications in high-efficiency power systems.
2. **Electric Vehicle**: In the motor controller, charger, and battery management system of electric vehicles, this MOSFET can be used for high-current switching, providing efficient power conversion and protection functions, helping to improve the performance and reliability of electric vehicles.
3. **Industrial Automation**: IPD105N03L G-VB is suitable for high-power switches in industrial automation equipment, such as motor drives, control systems, and power amplifiers. Its high current handling capability and low on-resistance ensure stable operation under high load conditions and improve the working efficiency of the equipment.
4. **Consumer Electronic Devices**: This MOSFET can be used in power management systems for smart home appliances, mobile devices, and other consumer electronics products. It can effectively control current, extend battery life, and provide high-efficiency and reliable power switching functions.
With its high current capability and low on-resistance, IPD105N03L G-VB is suitable for a variety of high-efficiency power switching and management applications, providing excellent performance and reliability.
1. **Power Management System**: IPD105N03L G-VB is ideal for use in DC-DC converters, switching power supplies, and power management modules. Its low on-resistance and high current handling capability enable it to effectively reduce power loss and improve the energy efficiency of the system, especially suitable for applications in high-efficiency power systems.
2. **Electric Vehicle**: In the motor controller, charger, and battery management system of electric vehicles, this MOSFET can be used for high-current switching, providing efficient power conversion and protection functions, helping to improve the performance and reliability of electric vehicles.
3. **Industrial Automation**: IPD105N03L G-VB is suitable for high-power switches in industrial automation equipment, such as motor drives, control systems, and power amplifiers. Its high current handling capability and low on-resistance ensure stable operation under high load conditions and improve the working efficiency of the equipment.
4. **Consumer Electronic Devices**: This MOSFET can be used in power management systems for smart home appliances, mobile devices, and other consumer electronics products. It can effectively control current, extend battery life, and provide high-efficiency and reliable power switching functions.
With its high current capability and low on-resistance, IPD105N03L G-VB is suitable for a variety of high-efficiency power switching and management applications, providing excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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