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IPD100N04S4-02-VB Product details
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IPD100N04S4-02-VB MOSFET Product Introduction
IPD100N04S4-02-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high current and low power applications. It supports 40V drain-source voltage (VDS) and ±20V gate-source voltage (VGS), with low on-resistance (RDS(ON)) and high current carrying capacity. This MOSFET uses advanced trench technology to provide excellent switching performance and energy efficiency, suitable for various applications requiring high performance and high reliability.
IPD100N04S4-02-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high current and low power applications. It supports 40V drain-source voltage (VDS) and ±20V gate-source voltage (VGS), with low on-resistance (RDS(ON)) and high current carrying capacity. This MOSFET uses advanced trench technology to provide excellent switching performance and energy efficiency, suitable for various applications requiring high performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 1.6mΩ @ VGS = 10V
- **Drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 1.6mΩ @ VGS = 10V
- **Drain current (ID)**: 120A
- **Technology type**: Trench technology
Domain and module applications：
Applicable fields and application modules
The low on-resistance and high current capability of IPD100N04S4-02-VB MOSFET make it suitable for a variety of high-performance applications:
1. **Power management**: This MOSFET performs well in DC-DC converters, PFC modules and power supply systems. Its low RDS(ON) can effectively reduce power consumption and improve power conversion efficiency, and is particularly suitable for high-power and high-load power modules.
2. **Load switch**: IPD100N04S4-02-VB is suitable for load switching applications such as motor control and high-power load management. Its high current handling capability ensures stability and low heat generation during load switching operation.
3. **Power tools and electric vehicles**: In the drive systems of power tools and electric vehicles, this MOSFET provides efficient current switching capabilities, supports high-power operation and optimizes battery management, thereby improving the performance and reliability of the equipment.
4. **Consumer Electronics**: In the battery management system of laptops, smartphones and other portable devices, the IPD100N04S4-02-VB can efficiently manage the battery charging and discharging process, optimizing the energy efficiency and service life of the device.
In summary, the IPD100N04S4-02-VB is widely used in electronic devices and systems that require high efficiency and high performance due to its excellent current handling capability and low power consumption.
The low on-resistance and high current capability of IPD100N04S4-02-VB MOSFET make it suitable for a variety of high-performance applications:
1. **Power management**: This MOSFET performs well in DC-DC converters, PFC modules and power supply systems. Its low RDS(ON) can effectively reduce power consumption and improve power conversion efficiency, and is particularly suitable for high-power and high-load power modules.
2. **Load switch**: IPD100N04S4-02-VB is suitable for load switching applications such as motor control and high-power load management. Its high current handling capability ensures stability and low heat generation during load switching operation.
3. **Power tools and electric vehicles**: In the drive systems of power tools and electric vehicles, this MOSFET provides efficient current switching capabilities, supports high-power operation and optimizes battery management, thereby improving the performance and reliability of the equipment.
4. **Consumer Electronics**: In the battery management system of laptops, smartphones and other portable devices, the IPD100N04S4-02-VB can efficiently manage the battery charging and discharging process, optimizing the energy efficiency and service life of the device.
In summary, the IPD100N04S4-02-VB is widely used in electronic devices and systems that require high efficiency and high performance due to its excellent current handling capability and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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