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IPD096N08N3 G-VB Product details
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1. Product Introduction
The IPD096N08N3 G-VB is a high-performance N-channel power MOSFET in a TO252 package. Designed for high voltage and high current applications, this MOSFET features an 80V drain-source voltage (VDS) and ±20V gate-source voltage (VGS) rating. It uses Trench technology, has an extremely low on-resistance (RDS(ON)), and can handle a maximum drain current (ID) of 75A. This low on-resistance and high current capability make the IPD096N08N3 G-VB an ideal choice for high-efficiency power management and power switching applications, especially in applications that require high reliability and high efficiency.
The IPD096N08N3 G-VB is a high-performance N-channel power MOSFET in a TO252 package. Designed for high voltage and high current applications, this MOSFET features an 80V drain-source voltage (VDS) and ±20V gate-source voltage (VGS) rating. It uses Trench technology, has an extremely low on-resistance (RDS(ON)), and can handle a maximum drain current (ID) of 75A. This low on-resistance and high current capability make the IPD096N08N3 G-VB an ideal choice for high-efficiency power management and power switching applications, especially in applications that require high reliability and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Parameter Description
- **Package: ** TO252
- **Configuration: ** Single-N-Channel
- **Drain-Source Voltage (VDS): ** 80V
- **Gate-Source Voltage (VGS): ** ±20V
- **Threshold Voltage (Vth): ** 3V
- **On-Resistance (RDS(ON)): **
- 5mΩ @ VGS = 10V
- **Drain Current (ID): ** 75A
- **Technology: ** Trench Technology
- **Power Dissipation (Ptot): ** 100W
- **Operating Temperature Range (Tj): ** -55°C to 150°C
- **Package: ** TO252
- **Configuration: ** Single-N-Channel
- **Drain-Source Voltage (VDS): ** 80V
- **Gate-Source Voltage (VGS): ** ±20V
- **Threshold Voltage (Vth): ** 3V
- **On-Resistance (RDS(ON)): **
- 5mΩ @ VGS = 10V
- **Drain Current (ID): ** 75A
- **Technology: ** Trench Technology
- **Power Dissipation (Ptot): ** 100W
- **Operating Temperature Range (Tj): ** -55°C to 150°C
Domain and module applications：
3. Application fields and modules
The high performance characteristics of IPD096N08N3 G-VB make it suitable for the following fields and modules:
- **Switching Power Supply (SMPS):** In high-efficiency switching power supply systems, IPD096N08N3 G-VB is used as the main switching element to effectively manage high voltage and high current, providing low-loss power conversion. The low on-resistance of this MOSFET helps improve the overall system efficiency and is suitable for power modules with high power density.
- **Motor Drive:** In motor drive systems, such as stepper motors and DC motor drives, the high current capability and low on-resistance of MOSFET can improve the driving performance and control accuracy of the motor. This makes it excel in automation equipment, robotics and motor control systems.
- **Automotive Electronics:** IPD096N08N3 G-VB is suitable for high-power switching applications in automotive electronics, such as power windows, power seats and power tailgates. Its high current handling capability and low on-resistance can enhance the efficiency and reliability of automotive electronic systems.
- **Uninterruptible Power Supply (UPS):** In UPS systems, this MOSFET can be used as a power switch to support efficient power conversion and backup power management. Its low on-resistance helps reduce energy loss and improve system stability and efficiency.
- **Electric Vehicle (EV) Charger:** The IPD096N08N3 G-VB can be used as a power switch in electric vehicle charging systems to support high current charging applications. Its high performance and reliability help achieve fast charging and high-efficiency power management.
The superior performance of the IPD096N08N3 G-VB MOSFET makes it an ideal choice in a variety of high current and high power conversion applications, especially in systems that require high performance and high reliability.
The high performance characteristics of IPD096N08N3 G-VB make it suitable for the following fields and modules:
- **Switching Power Supply (SMPS):** In high-efficiency switching power supply systems, IPD096N08N3 G-VB is used as the main switching element to effectively manage high voltage and high current, providing low-loss power conversion. The low on-resistance of this MOSFET helps improve the overall system efficiency and is suitable for power modules with high power density.
- **Motor Drive:** In motor drive systems, such as stepper motors and DC motor drives, the high current capability and low on-resistance of MOSFET can improve the driving performance and control accuracy of the motor. This makes it excel in automation equipment, robotics and motor control systems.
- **Automotive Electronics:** IPD096N08N3 G-VB is suitable for high-power switching applications in automotive electronics, such as power windows, power seats and power tailgates. Its high current handling capability and low on-resistance can enhance the efficiency and reliability of automotive electronic systems.
- **Uninterruptible Power Supply (UPS):** In UPS systems, this MOSFET can be used as a power switch to support efficient power conversion and backup power management. Its low on-resistance helps reduce energy loss and improve system stability and efficiency.
- **Electric Vehicle (EV) Charger:** The IPD096N08N3 G-VB can be used as a power switch in electric vehicle charging systems to support high current charging applications. Its high performance and reliability help achieve fast charging and high-efficiency power management.
The superior performance of the IPD096N08N3 G-VB MOSFET makes it an ideal choice in a variety of high current and high power conversion applications, especially in systems that require high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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