中文
English
IPD088N06N3 G-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IPD088N06N3 G-VB is a high-performance single-channel N-type power MOSFET in TO252 package. It uses trench technology to provide excellent conduction performance and high current handling capability. With a maximum drain-source voltage of 60V and a maximum drain current of up to 58A, this MOSFET is ideal for medium current applications. Its design optimizes the on-resistance, making it excellent in high-efficiency power management and power conversion applications.
IPD088N06N3 G-VB is a high-performance single-channel N-type power MOSFET in TO252 package. It uses trench technology to provide excellent conduction performance and high current handling capability. With a maximum drain-source voltage of 60V and a maximum drain current of up to 58A, this MOSFET is ideal for medium current applications. Its design optimizes the on-resistance, making it excellent in high-efficiency power management and power conversion applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 13mΩ@VGS=4.5V, 10mΩ@VGS=10V
- **Drain current (ID)**: 58A
- **Technology type**: Trench MOSFET
- **Switching speed**: Fast
- **Power consumption**: Low power design, suitable for efficient power management applications
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 13mΩ@VGS=4.5V, 10mΩ@VGS=10V
- **Drain current (ID)**: 58A
- **Technology type**: Trench MOSFET
- **Switching speed**: Fast
- **Power consumption**: Low power design, suitable for efficient power management applications
Domain and module applications：
III. Application fields and module description:
1. **DC-DC converter**:
IPD088N06N3 G-VB is very suitable for switching elements in DC-DC converters. Its low on-resistance and high current handling capability enable it to effectively reduce power loss and improve energy efficiency in converters. This is especially important for various consumer electronic devices and industrial power management modules.
2. **Motor control system**:
In motor control applications, such as DC motors and stepper motors, IPD088N06N3 G-VB can be used as a drive switch. Its high current handling capability and stable switching characteristics ensure smooth operation of the motor when the load changes, and is suitable for control systems that require high efficiency and low heat.
3. **Automotive electronics**:
This MOSFET is also widely used in automotive electronic systems, such as electric power steering (EPS), electric window control and car light control. Its reliable performance and high current carrying capacity enable it to handle high loads in automotive electrical systems, ensuring system stability and safety.
4. **Battery Management System**:
IPD088N06N3 G-VB can be used in battery management systems (BMS), especially in electric vehicles and energy storage systems. During the charging and discharging process, it can effectively manage current, reduce power loss, and improve the overall performance and reliability of the battery system.
1. **DC-DC converter**:
IPD088N06N3 G-VB is very suitable for switching elements in DC-DC converters. Its low on-resistance and high current handling capability enable it to effectively reduce power loss and improve energy efficiency in converters. This is especially important for various consumer electronic devices and industrial power management modules.
2. **Motor control system**:
In motor control applications, such as DC motors and stepper motors, IPD088N06N3 G-VB can be used as a drive switch. Its high current handling capability and stable switching characteristics ensure smooth operation of the motor when the load changes, and is suitable for control systems that require high efficiency and low heat.
3. **Automotive electronics**:
This MOSFET is also widely used in automotive electronic systems, such as electric power steering (EPS), electric window control and car light control. Its reliable performance and high current carrying capacity enable it to handle high loads in automotive electrical systems, ensuring system stability and safety.
4. **Battery Management System**:
IPD088N06N3 G-VB can be used in battery management systems (BMS), especially in electric vehicles and energy storage systems. During the charging and discharging process, it can effectively manage current, reduce power loss, and improve the overall performance and reliability of the battery system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
