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IPD088N04L G-VB Product details
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**
IPD088N04L G-VB is a high-performance single N-channel MOSFET with a TO252 package type. This MOSFET is manufactured using an advanced Trench process and has excellent switching characteristics and low on-resistance. It is designed for high-current and high-efficiency power conversion applications, with a maximum drain-source voltage of 40V and a continuous drain current capability of 85A. The low on-resistance and stable performance of the IPD088N04L G-VB make it ideal for use in applications that require high power handling and high-efficiency conversion.
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**IPD088N04L G-VB
IPD088N04L G-VB is a high-performance single N-channel MOSFET with a TO252 package type. This MOSFET is manufactured using an advanced Trench process and has excellent switching characteristics and low on-resistance. It is designed for high-current and high-efficiency power conversion applications, with a maximum drain-source voltage of 40V and a continuous drain current capability of 85A. The low on-resistance and stable performance of the IPD088N04L G-VB make it ideal for use in applications that require high power handling and high-efficiency conversion.
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**IPD088N04L G-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**
- **Package Type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(VDS)**: 40V
- **Gate Drive Voltage(VGS)**: ±20V
- **Threshold Voltage(Vth)**: 2.5V
- **On-Resistance(RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Continuous Drain Current(ID)**: 85A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 175°C
- **Switching Performance**:
- High-speed switching characteristics, suitable for high-frequency applications.
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**IPD088N04L G-VB
- **Package Type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(VDS)**: 40V
- **Gate Drive Voltage(VGS)**: ±20V
- **Threshold Voltage(Vth)**: 2.5V
- **On-Resistance(RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Continuous Drain Current(ID)**: 85A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 175°C
- **Switching Performance**:
- High-speed switching characteristics, suitable for high-frequency applications.
---
**IPD088N04L G-VB
Domain and module applications：
**
1. **Power Management Systems**: The IPD088N04L G-VB MOSFET performs well in power management systems, especially in DC-DC converters. Its low on-resistance ensures efficient energy conversion under high current conditions, reducing power loss and heat generation, and is suitable for computer power supplies, power adapters, and other high-efficiency power solutions.
2. **Automotive Electronics**: In automotive electronics applications, this MOSFET can be used in battery management systems, electric power steering systems, and motor drives. Due to its high current handling capability and low on-resistance, the IPD088N04L G-VB can improve the efficiency and reliability of these systems, meeting the requirements of automotive electronics for high performance and high durability.
3. **Industrial Control**: In industrial equipment, such as motor controllers and switching power supplies, the high current capability and low power consumption characteristics of the IPD088N04L G-VB make it very suitable. This MOSFET can provide stable current handling, ensuring the stability and efficiency of the equipment during long-term operation.
4. **Consumer electronics**: In the field of consumer electronics, such as charging modules for mobile devices, laptop power adapters, etc., the low on-resistance and high switching speed of IPD088N04L G-VB can improve charging efficiency and reduce device heating. This makes it an ideal choice for fast charging solutions.
1. **Power Management Systems**: The IPD088N04L G-VB MOSFET performs well in power management systems, especially in DC-DC converters. Its low on-resistance ensures efficient energy conversion under high current conditions, reducing power loss and heat generation, and is suitable for computer power supplies, power adapters, and other high-efficiency power solutions.
2. **Automotive Electronics**: In automotive electronics applications, this MOSFET can be used in battery management systems, electric power steering systems, and motor drives. Due to its high current handling capability and low on-resistance, the IPD088N04L G-VB can improve the efficiency and reliability of these systems, meeting the requirements of automotive electronics for high performance and high durability.
3. **Industrial Control**: In industrial equipment, such as motor controllers and switching power supplies, the high current capability and low power consumption characteristics of the IPD088N04L G-VB make it very suitable. This MOSFET can provide stable current handling, ensuring the stability and efficiency of the equipment during long-term operation.
4. **Consumer electronics**: In the field of consumer electronics, such as charging modules for mobile devices, laptop power adapters, etc., the low on-resistance and high switching speed of IPD088N04L G-VB can improve charging efficiency and reduce device heating. This makes it an ideal choice for fast charging solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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