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IPD082N10N3 G-VB Product details
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1. IPD082N10N3 G-VB Product Introduction
IPD082N10N3 G-VB is a high-performance N-channel MOSFET packaged in TO252 and using advanced Trench technology. Designed for high voltage and high current applications, this MOSFET has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 85A. It exhibits extremely low on-resistance (RDS(ON)) at different gate voltages, which is 10.5mΩ at VGS=4.5V and 8.5mΩ at VGS=10V. These features make it an ideal choice for efficient power conversion and power management, significantly reducing energy loss and improving the overall performance of the system.
IPD082N10N3 G-VB is a high-performance N-channel MOSFET packaged in TO252 and using advanced Trench technology. Designed for high voltage and high current applications, this MOSFET has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 85A. It exhibits extremely low on-resistance (RDS(ON)) at different gate voltages, which is 10.5mΩ at VGS=4.5V and 8.5mΩ at VGS=10V. These features make it an ideal choice for efficient power conversion and power management, significantly reducing energy loss and improving the overall performance of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | 8.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of IPD082N10N3 G-VB
| **Parameter** | **Value** |
|---------------------------|----------------------------------|
| **Package** | TO252 |
| **Channel type** | Single N-channel (Single-N) |
| **Drain-source voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Through voltage (Vth)** | 2.5V |
| **On-resistance RDS(ON)** | 10.5mΩ @ VGS=4.5V；8.5mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 85A |
| **Technology** | Trench (trench technology) |
IPD082N10N3 G-VB The combination of high voltage withstand capability, low on-resistance and high current carrying capability makes it ideal for power management applications requiring high efficiency and high reliability.
| **Parameter** | **Value** |
|---------------------------|----------------------------------|
| **Package** | TO252 |
| **Channel type** | Single N-channel (Single-N) |
| **Drain-source voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Through voltage (Vth)** | 2.5V |
| **On-resistance RDS(ON)** | 10.5mΩ @ VGS=4.5V；8.5mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 85A |
| **Technology** | Trench (trench technology) |
IPD082N10N3 G-VB The combination of high voltage withstand capability, low on-resistance and high current carrying capability makes it ideal for power management applications requiring high efficiency and high reliability.
Domain and module applications：
III. Application fields and module examples of IPD082N10N3 G-VB
1. **High-power DC-DC converter**:
IPD082N10N3 G-VB is suitable for switching elements in high-power DC-DC converters. Its high voltage tolerance and low on-resistance can effectively reduce energy loss under high voltage and high current conditions, thereby improving the efficiency and stability of the converter.
2. **Electric vehicle power system**:
In the power system of electric vehicles, this MOSFET can be used in battery management systems and motor drivers to efficiently handle power conversion tasks under high current and high voltage conditions. Its high current handling capability and low on-resistance can improve battery charging and discharging efficiency.
3. **Power adapter and charger**:
In power adapters and chargers, IPD082N10N3 G-VB can be used for efficient power conversion modules. Its low on-resistance helps reduce energy loss in adapters and chargers, improving overall energy efficiency, especially in high-power charging applications.
4. **Power conversion and drive modules**:
This MOSFET is also suitable for various power conversion and drive modules, such as LED drive power supplies and motor drive systems. Its low on-resistance and high current capability ensure efficient and stable operation in these high-power applications.
1. **High-power DC-DC converter**:
IPD082N10N3 G-VB is suitable for switching elements in high-power DC-DC converters. Its high voltage tolerance and low on-resistance can effectively reduce energy loss under high voltage and high current conditions, thereby improving the efficiency and stability of the converter.
2. **Electric vehicle power system**:
In the power system of electric vehicles, this MOSFET can be used in battery management systems and motor drivers to efficiently handle power conversion tasks under high current and high voltage conditions. Its high current handling capability and low on-resistance can improve battery charging and discharging efficiency.
3. **Power adapter and charger**:
In power adapters and chargers, IPD082N10N3 G-VB can be used for efficient power conversion modules. Its low on-resistance helps reduce energy loss in adapters and chargers, improving overall energy efficiency, especially in high-power charging applications.
4. **Power conversion and drive modules**:
This MOSFET is also suitable for various power conversion and drive modules, such as LED drive power supplies and motor drive systems. Its low on-resistance and high current capability ensure efficient and stable operation in these high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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