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IPD079N06L3 G-VB Product details

Product introduction:

IPD079N06L3 G-VB Product Introduction

IPD079N06L3 G-VB is a high-performance N-channel power MOSFET in TO252 package. It is designed for high-efficiency switching applications and has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is 3V, which is suitable for medium and low voltage drive applications. Using advanced trench technology, the on-resistance (RDS(ON)) of IPD079N06L3 G-VB is 12mΩ at a 4.5V gate drive, and is reduced to 4.5mΩ at a 10V gate voltage, which makes it excellent in applications that require high efficiency and low power loss. Its maximum drain current (ID) is 97A, which is suitable for a variety of high-current switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 3V 97A 4.5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 3V 97A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 3V 97A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

| Parameter| Value| Unit|
|---------------------|---------------------|---------|
| Package| TO252 | - |
| Channel type| Single N-channel| - |
| Drain-source voltage (VDS) | 60 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 3 | V |
| On-resistance (RDS(ON)) | 12mΩ@VGS=4.5V | mΩ |
| On-resistance (RDS(ON)) | 4.5mΩ@VGS=10V | mΩ |
| Drain current (ID) | 97 | A |
| Technology type| Trench | - |

Domain and module applications:

Applications and Modules

1. **Electric and Hybrid Vehicles**: In electric and hybrid vehicles, the IPD079N06L3 G-VB's high current carrying capability and low on-resistance make it an ideal choice for motor drives and battery management systems. It is able to provide stable performance and efficient energy conversion in these high-load applications, ensuring the reliability and efficiency of vehicle systems.

2. **DC-DC Converters**: Due to its low on-resistance and high current capability, the IPD079N06L3 G-VB is ideal for a variety of DC-DC converter applications, including computer power supplies and power management modules in communication equipment. Its high efficiency characteristics help reduce power losses and improve overall system efficiency.

3. **Industrial Automation Equipment**: In the field of industrial automation, this MOSFET's high current capability and excellent on-performance make it ideal for motor control and high-power switching applications. It can handle high load requirements, ensuring efficient operation and long-term stability of industrial equipment.

4. **Consumer Electronics and Home Appliances**: IPD079N06L3 G-VB is also suitable for power management applications in consumer electronics and home appliances. For example, it can be used in LED driver power supplies and switching power supplies to provide efficient power conversion and stable switching performance, improving the energy efficiency and performance of the equipment.

IPD079N06L3 G-VB is a high-performance MOSFET whose low on-resistance and high current capability enable it to perform well in a variety of demanding applications. Whether in electric vehicles, industrial equipment or consumer electronics, it can provide reliable performance and efficient energy management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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