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IPD06N03LA G-VB Product details
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1. IPD06N03LA G-VB Product Introduction
IPD06N03LA G-VB is a high-performance single N-channel MOSFET in TO252 package. It uses Trench technology and has extremely low on-resistance and high current handling capability. The maximum drain-source voltage (VDS) of this MOSFET is 20V, which is suitable for low-voltage application scenarios. Its gate threshold voltage (Vth) is between 0.5V and 1.5V, allowing it to be effectively turned on at a lower gate voltage to achieve low on-resistance. Due to its low RDS(ON) of 6mΩ (VGS=2.5V) and 4.5mΩ (VGS=4.5V), as well as its high current capability of 100A, this MOSFET is very suitable for applications with high power density and high efficiency requirements.
IPD06N03LA G-VB is a high-performance single N-channel MOSFET in TO252 package. It uses Trench technology and has extremely low on-resistance and high current handling capability. The maximum drain-source voltage (VDS) of this MOSFET is 20V, which is suitable for low-voltage application scenarios. Its gate threshold voltage (Vth) is between 0.5V and 1.5V, allowing it to be effectively turned on at a lower gate voltage to achieve low on-resistance. Due to its low RDS(ON) of 6mΩ (VGS=2.5V) and 4.5mΩ (VGS=4.5V), as well as its high current capability of 100A, this MOSFET is very suitable for applications with high power density and high efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. IPD06N03LA G-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Thermal resistance (RθJA)**: 60°C/W
- **Gate charge (Qg)**: 90nC
- **Switching time**:
- Turn-on time (ton): 12ns
- Turn-off time (toff): 40ns
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Thermal resistance (RθJA)**: 60°C/W
- **Gate charge (Qg)**: 90nC
- **Switching time**:
- Turn-on time (ton): 12ns
- Turn-off time (toff): 40ns
Domain and module applications：
III. Application fields and modules of IPD06N03LA G-VB
1. **High-efficiency power converters**
IPD06N03LA G-VB is particularly suitable for high-efficiency power converters due to its extremely low on-resistance and high current capability. Whether in AC-DC converters or DC-DC step-down converters, the low RDS(ON) of this MOSFET can significantly reduce power losses and improve overall system efficiency.
2. **Electric vehicles and hybrid systems**
In the power management system of electric and hybrid vehicles, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice. It can be used in battery management systems, motor drive modules and charging control systems to improve the overall performance and reliability of electric vehicles.
3. **Portable devices**
IPD06N03LA G-VB is suitable for power management and switch control in portable electronic devices, such as smartphones, tablets and other mobile devices. Its low gate threshold voltage and low on-resistance enable it to effectively reduce power consumption and extend battery life.
4. **Industrial Power Module**
In industrial applications, this MOSFET can be used in high-power power modules, such as motor drive control and industrial power distribution systems. Its excellent conduction performance and fast switching characteristics enable it to cope with high-frequency and high-current industrial application requirements, ensuring efficient operation of the system.
1. **High-efficiency power converters**
IPD06N03LA G-VB is particularly suitable for high-efficiency power converters due to its extremely low on-resistance and high current capability. Whether in AC-DC converters or DC-DC step-down converters, the low RDS(ON) of this MOSFET can significantly reduce power losses and improve overall system efficiency.
2. **Electric vehicles and hybrid systems**
In the power management system of electric and hybrid vehicles, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice. It can be used in battery management systems, motor drive modules and charging control systems to improve the overall performance and reliability of electric vehicles.
3. **Portable devices**
IPD06N03LA G-VB is suitable for power management and switch control in portable electronic devices, such as smartphones, tablets and other mobile devices. Its low gate threshold voltage and low on-resistance enable it to effectively reduce power consumption and extend battery life.
4. **Industrial Power Module**
In industrial applications, this MOSFET can be used in high-power power modules, such as motor drive control and industrial power distribution systems. Its excellent conduction performance and fast switching characteristics enable it to cope with high-frequency and high-current industrial application requirements, ensuring efficient operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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