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IPD068P03L3 G-VB Product details
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1. IPD068P03L3 G-VB Product Introduction
IPD068P03L3 G-VB is a high-efficiency single P-channel MOSFET in TO252 package, designed for low voltage and high current applications. It uses advanced Trench technology to provide excellent conductivity and switching performance. The maximum drain-source voltage (VDS) of this MOSFET is -30V, which is suitable for switching applications in negative voltage environments. Its threshold voltage (Vth) is -2.5V, and the on-resistance (RDS(ON)) is 11mΩ at VGS=4.5V and 9mΩ at VGS=10V, which enables it to effectively reduce power consumption under high current conditions. With a maximum drain current (ID) of up to -60A, it performs well in loads requiring high current.
IPD068P03L3 G-VB is a high-efficiency single P-channel MOSFET in TO252 package, designed for low voltage and high current applications. It uses advanced Trench technology to provide excellent conductivity and switching performance. The maximum drain-source voltage (VDS) of this MOSFET is -30V, which is suitable for switching applications in negative voltage environments. Its threshold voltage (Vth) is -2.5V, and the on-resistance (RDS(ON)) is 11mΩ at VGS=4.5V and 9mΩ at VGS=10V, which enables it to effectively reduce power consumption under high current conditions. With a maximum drain current (ID) of up to -60A, it performs well in loads requiring high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. IPD068P03L3 G-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single P channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON)）**:
- 11mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum drain current (ID)**: -60A
- **Technology**: Trench MOSFET technology
- **Power dissipation**: Depends on the thermal resistance characteristics of the package
- **Switching speed**: High-speed switching capability, suitable for high-frequency applications
- **Package type**: TO252
- **Channel configuration**: Single P channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON)）**:
- 11mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum drain current (ID)**: -60A
- **Technology**: Trench MOSFET technology
- **Power dissipation**: Depends on the thermal resistance characteristics of the package
- **Switching speed**: High-speed switching capability, suitable for high-frequency applications
Domain and module applications：
III. Application Fields and Modules
1. **Negative Power Switch**:
IPD068P03L3 G-VB performs well in negative power switch applications, especially in switch circuits that need to handle negative voltages. Its high current handling capability and low on-resistance make it very suitable for negative power switch modules, negative voltage converters, etc. in computer power supplies.
2. **High Current Battery Protection**:
This MOSFET is suitable for protection applications in battery management systems. Due to its -30V withstand voltage capability and -60A current capability, it can effectively protect lithium battery packs from overcurrent and overvoltage, and is widely used in battery protection modules for electric vehicles and portable devices.
3. **Negative Voltage Converter**:
In negative voltage converters, IPD068P03L3 G-VB provides efficient switching performance. Its low on-resistance and high current handling capability ensure low power consumption and high reliability in negative voltage converters, and is suitable for negative voltage power supply applications such as communication equipment and industrial control systems.
4. **LED drive circuit**:
Although mainly used in negative voltage applications, IPD068P03L3 G-VB can also be used in LED drive circuits, especially in special LED applications that require negative voltage drive, such as high-brightness LED lighting systems and lighting modules driven by negative power supplies.
The low on-resistance, high current capability and negative voltage handling capability of IPD068P03L3 G-VB make it play an important role in these fields, especially in application scenarios that require efficient and reliable negative voltage switching and protection.
1. **Negative Power Switch**:
IPD068P03L3 G-VB performs well in negative power switch applications, especially in switch circuits that need to handle negative voltages. Its high current handling capability and low on-resistance make it very suitable for negative power switch modules, negative voltage converters, etc. in computer power supplies.
2. **High Current Battery Protection**:
This MOSFET is suitable for protection applications in battery management systems. Due to its -30V withstand voltage capability and -60A current capability, it can effectively protect lithium battery packs from overcurrent and overvoltage, and is widely used in battery protection modules for electric vehicles and portable devices.
3. **Negative Voltage Converter**:
In negative voltage converters, IPD068P03L3 G-VB provides efficient switching performance. Its low on-resistance and high current handling capability ensure low power consumption and high reliability in negative voltage converters, and is suitable for negative voltage power supply applications such as communication equipment and industrial control systems.
4. **LED drive circuit**:
Although mainly used in negative voltage applications, IPD068P03L3 G-VB can also be used in LED drive circuits, especially in special LED applications that require negative voltage drive, such as high-brightness LED lighting systems and lighting modules driven by negative power supplies.
The low on-resistance, high current capability and negative voltage handling capability of IPD068P03L3 G-VB make it play an important role in these fields, especially in application scenarios that require efficient and reliable negative voltage switching and protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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