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IPD068N10N3 G-VB Product details
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1. Product Introduction:
IPD068N10N3 G-VB is a high-performance single N-channel MOSFET packaged in TO252 and using advanced Trench technology. It has the characteristics of high withstand voltage and low on-resistance, suitable for high current and high efficiency circuit design. The drain-source voltage of this MOSFET can reach up to 100V and the rated current is 85A, making it perform well in a variety of demanding applications.
IPD068N10N3 G-VB is a high-performance single N-channel MOSFET packaged in TO252 and using advanced Trench technology. It has the characteristics of high withstand voltage and low on-resistance, suitable for high current and high efficiency circuit design. The drain-source voltage of this MOSFET can reach up to 100V and the rated current is 85A, making it perform well in a variety of demanding applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | 8.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10.5mΩ @ VGS=4.5V
- 8.5mΩ @ VGS=10V
- **Rated current (ID)**: 85A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10.5mΩ @ VGS=4.5V
- 8.5mΩ @ VGS=10V
- **Rated current (ID)**: 85A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Application fields and module examples:
- **Power management**: The high drain-source voltage and low on-resistance of IPD068N10N3 G-VB make it excel in power management applications. It is suitable for high-efficiency DC-DC converters, power switches and battery management systems, providing stable power conversion and efficient energy transfer.
- **Automotive electronics**: In automotive electronic systems, this MOSFET can be used in the power system, startup control, and on-board power management modules of electric vehicles. It can withstand high voltage and high current to improve the stability and reliability of the system.
- **Industrial power modules**: IPD068N10N3 G-VB is suitable for power modules in industrial fields, such as motor drive systems, industrial controllers and power supply units, providing strong current handling capabilities and durability to meet the needs of high-power applications.
- **Consumer electronics**: In consumer electronics products, this MOSFET can be used in fast chargers, battery protection circuits and power switch applications to ensure efficient power management and low power consumption performance, and enhance the user experience of the device.
- **Communication Equipment**: In communication infrastructure, the high withstand voltage and low on-resistance of the IPD068N10N3 G-VB make it suitable for base station power supplies, power adapters, and other high-power communication equipment, ensuring stable operation and high efficiency of the system.
- **Power management**: The high drain-source voltage and low on-resistance of IPD068N10N3 G-VB make it excel in power management applications. It is suitable for high-efficiency DC-DC converters, power switches and battery management systems, providing stable power conversion and efficient energy transfer.
- **Automotive electronics**: In automotive electronic systems, this MOSFET can be used in the power system, startup control, and on-board power management modules of electric vehicles. It can withstand high voltage and high current to improve the stability and reliability of the system.
- **Industrial power modules**: IPD068N10N3 G-VB is suitable for power modules in industrial fields, such as motor drive systems, industrial controllers and power supply units, providing strong current handling capabilities and durability to meet the needs of high-power applications.
- **Consumer electronics**: In consumer electronics products, this MOSFET can be used in fast chargers, battery protection circuits and power switch applications to ensure efficient power management and low power consumption performance, and enhance the user experience of the device.
- **Communication Equipment**: In communication infrastructure, the high withstand voltage and low on-resistance of the IPD068N10N3 G-VB make it suitable for base station power supplies, power adapters, and other high-power communication equipment, ensuring stable operation and high efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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