IPD060N03L-VB Product details
Product introduction:
IPD060N03L-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage, high current applications. The MOSFET has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V. It uses Trench technology and has an extremely low on-resistance of 4.5mΩ at VGS=4.5V and 6mΩ at VGS=2.5V. The turn-on voltage (Vth) ranges from 0.5V to 1.5V, which enables the IPD060N03L-VB to operate stably at a lower gate-source voltage and support a drain current (ID) of up to 100A. This design makes it particularly suitable for high-efficiency power management and high-current switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology
- **Power consumption**: Low conduction loss, suitable for high-performance applications
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Domain and module applications:
1. **Power Management System**: IPD060N03L-VB is widely used in DC-DC converters, switching power supplies and power management modules. Its low on-resistance and high current handling capability enable it to effectively reduce power consumption and improve system efficiency, and is particularly suitable for scenarios requiring high-efficiency power supplies.
2. **Electric Vehicle**: In the motor controller and battery management system of electric vehicles, this MOSFET can be used for efficient current switching, supporting high current transmission and optimizing the performance of the power system, ensuring the reliability and endurance of electric vehicles.
3. **Industrial Automation**: IPD060N03L-VB is suitable for high-power switching in industrial automation equipment, such as motor drives and automation control systems. Its high current handling capability and low on-resistance enable it to operate stably under high load conditions, improving the efficiency and reliability of the equipment.
4. **Consumer Electronic Devices**: In smartphones, tablets and other portable devices, this MOSFET can be used for power management and high-efficiency switching, improving battery efficiency, extending the use time of the device, and ensuring its stable operation.
With its high current handling capability and low on-resistance, the IPD060N03L-VB is suitable for a variety of applications requiring efficient current switching and power management.
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