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IPD05N03LB G-VB Product details
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IPD05N03LB G-VB MOSFET Product Introduction
IPD05N03LB G-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for applications requiring high current and low power consumption. The device supports a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. Its low on-resistance (RDS(ON)) and strong current carrying capability make it an ideal choice for a variety of power management and load switching applications. Using advanced Trench technology, IPD05N03LB G-VB provides excellent switching performance and high efficiency, ensuring low power consumption and high reliability under high load conditions.
IPD05N03LB G-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for applications requiring high current and low power consumption. The device supports a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. Its low on-resistance (RDS(ON)) and strong current carrying capability make it an ideal choice for a variety of power management and load switching applications. Using advanced Trench technology, IPD05N03LB G-VB provides excellent switching performance and high efficiency, ensuring low power consumption and high reliability under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench technology
Domain and module applications：
Applicable fields and application modules
IPD05N03LB G-VB MOSFET is widely used in the following fields due to its low on-resistance and high current handling capability:
1. **Power management**: In high-efficiency power conversion systems such as DC-DC converters, inverters and power modules, the low on-resistance of IPD05N03LB G-VB helps reduce energy loss and improve the overall efficiency of the system, especially for high-power load scenarios.
2. **Load switching**: The high current capability of this MOSFET makes it suitable for load switching applications such as motor drive and high-power load control. Its stable performance ensures reduced heat generation during switching and keeps the system running stably.
3. **Power tools and electric vehicles**: In the control systems of power tools and electric vehicles, IPD05N03LB G-VB provides a reliable current switching solution, which helps improve the operating efficiency and battery life of the equipment.
4. **Consumer Electronics**: In the battery management systems of laptops, smartphones, and other portable devices, this MOSFET can efficiently handle the battery charging and discharging process, improving overall energy efficiency and device stability.
In summary, the IPD05N03LB G-VB is widely used in electronic devices and systems that require high efficiency and high performance due to its excellent current handling capability and low power consumption.
IPD05N03LB G-VB MOSFET is widely used in the following fields due to its low on-resistance and high current handling capability:
1. **Power management**: In high-efficiency power conversion systems such as DC-DC converters, inverters and power modules, the low on-resistance of IPD05N03LB G-VB helps reduce energy loss and improve the overall efficiency of the system, especially for high-power load scenarios.
2. **Load switching**: The high current capability of this MOSFET makes it suitable for load switching applications such as motor drive and high-power load control. Its stable performance ensures reduced heat generation during switching and keeps the system running stably.
3. **Power tools and electric vehicles**: In the control systems of power tools and electric vehicles, IPD05N03LB G-VB provides a reliable current switching solution, which helps improve the operating efficiency and battery life of the equipment.
4. **Consumer Electronics**: In the battery management systems of laptops, smartphones, and other portable devices, this MOSFET can efficiently handle the battery charging and discharging process, improving overall energy efficiency and device stability.
In summary, the IPD05N03LB G-VB is widely used in electronic devices and systems that require high efficiency and high performance due to its excellent current handling capability and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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