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IPD053N08N3 G-VB Product details
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1. Product Introduction
The IPD053N08N3 G-VB is a high-performance N-channel power MOSFET in a TO252 package. This MOSFET is designed for high voltage and high current applications with a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) rating of ±20V. It uses Trench technology with extremely low on-resistance (RDS(ON)) and drain current (ID) handling capability of up to 75A. Its low on-resistance and high current capability make the IPD053N08N3 G-VB suitable for power management applications that require high performance and high reliability.
The IPD053N08N3 G-VB is a high-performance N-channel power MOSFET in a TO252 package. This MOSFET is designed for high voltage and high current applications with a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) rating of ±20V. It uses Trench technology with extremely low on-resistance (RDS(ON)) and drain current (ID) handling capability of up to 75A. Its low on-resistance and high current capability make the IPD053N08N3 G-VB suitable for power management applications that require high performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Parameter Description
- **Package: ** TO252
- **Configuration: ** Single-N-Channel
- **Drain-Source Voltage (VDS): ** 80V
- **Gate-Source Voltage (VGS): ** ±20V
- **Threshold Voltage (Vth): ** 3V
- **On-Resistance (RDS(ON)): **
- 5mΩ @ VGS = 10V
- **Drain Current (ID): ** 75A
- **Technology: ** Trench Technology
- **Power Dissipation (Ptot): ** 100W
- **Operating Temperature Range (Tj): ** -55°C to 150°C
- **Package: ** TO252
- **Configuration: ** Single-N-Channel
- **Drain-Source Voltage (VDS): ** 80V
- **Gate-Source Voltage (VGS): ** ±20V
- **Threshold Voltage (Vth): ** 3V
- **On-Resistance (RDS(ON)): **
- 5mΩ @ VGS = 10V
- **Drain Current (ID): ** 75A
- **Technology: ** Trench Technology
- **Power Dissipation (Ptot): ** 100W
- **Operating Temperature Range (Tj): ** -55°C to 150°C
Domain and module applications：
3. Applications and modules
The characteristics of IPD053N08N3 G-VB MOSFET make it suitable for multiple high-efficiency applications, including:
- **Switch Mode Power Supply (SMPS):** In an efficient switch mode power supply system, IPD053N08N3 G-VB is used as the main switching element to efficiently convert voltage and reduce power loss. Its low on-resistance and high current capability improve the efficiency of the switch mode power supply, and is particularly suitable for high power density applications.
- **Motor Drive:** In motor drive systems, such as stepper motors and DC motors, the high current handling capability and low on-resistance of MOSFET help improve the performance and control accuracy of the motor. This makes it an ideal choice in industrial automation and robotics.
- **Automotive Electronics:** IPD053N08N3 G-VB is suitable for high power switching applications in automotive electronic systems, such as power seats, power windows, and power tailgates. Its high current capability and low on-resistance can effectively support these functions and improve the efficiency and reliability of automotive electronic systems.
- **Battery Management System (BMS):** In the battery management system, this MOSFET can be used as a battery protection switch to ensure the safety and stability of the battery. Its low on-resistance helps reduce energy loss and improve the overall efficiency of the system.
- **Electric Vehicle (EV) Charger:** In electric vehicle chargers, the IPD053N08N3 G-VB can provide high current handling capabilities, support fast charging applications, and ensure high efficiency and stability during the charging process.
The high-performance characteristics of the IPD053N08N3 G-VB enable it to perform well in high-current and high-power conversion applications, and is suitable for a variety of electronic systems that require high efficiency and high reliability.
The characteristics of IPD053N08N3 G-VB MOSFET make it suitable for multiple high-efficiency applications, including:
- **Switch Mode Power Supply (SMPS):** In an efficient switch mode power supply system, IPD053N08N3 G-VB is used as the main switching element to efficiently convert voltage and reduce power loss. Its low on-resistance and high current capability improve the efficiency of the switch mode power supply, and is particularly suitable for high power density applications.
- **Motor Drive:** In motor drive systems, such as stepper motors and DC motors, the high current handling capability and low on-resistance of MOSFET help improve the performance and control accuracy of the motor. This makes it an ideal choice in industrial automation and robotics.
- **Automotive Electronics:** IPD053N08N3 G-VB is suitable for high power switching applications in automotive electronic systems, such as power seats, power windows, and power tailgates. Its high current capability and low on-resistance can effectively support these functions and improve the efficiency and reliability of automotive electronic systems.
- **Battery Management System (BMS):** In the battery management system, this MOSFET can be used as a battery protection switch to ensure the safety and stability of the battery. Its low on-resistance helps reduce energy loss and improve the overall efficiency of the system.
- **Electric Vehicle (EV) Charger:** In electric vehicle chargers, the IPD053N08N3 G-VB can provide high current handling capabilities, support fast charging applications, and ensure high efficiency and stability during the charging process.
The high-performance characteristics of the IPD053N08N3 G-VB enable it to perform well in high-current and high-power conversion applications, and is suitable for a variety of electronic systems that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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