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IPD053N06N3 G-VB Product details
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1. Product Introduction:
IPD053N06N3 G-VB is a high-performance single-channel N-type power MOSFET packaged in TO252. The device uses advanced trench technology to provide excellent conduction performance and high current handling capability. Its rated drain-source voltage is 60V, which can withstand high voltages while maintaining low on-resistance. The maximum drain current of this MOSFET is 97A, which is very suitable for applications that require high current drive. Its design makes it excel in high-efficiency power management and high-power applications.
IPD053N06N3 G-VB is a high-performance single-channel N-type power MOSFET packaged in TO252. The device uses advanced trench technology to provide excellent conduction performance and high current handling capability. Its rated drain-source voltage is 60V, which can withstand high voltages while maintaining low on-resistance. The maximum drain current of this MOSFET is 97A, which is very suitable for applications that require high current drive. Its design makes it excel in high-efficiency power management and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 12mΩ@VGS=4.5V, 4.5mΩ@VGS=10V
- **Drain current (ID)**: 97A
- **Technology type**: Trench MOSFET
- **Switching speed**: Fast
- **Power consumption**: Low power design, suitable for efficient power management applications
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 12mΩ@VGS=4.5V, 4.5mΩ@VGS=10V
- **Drain current (ID)**: 97A
- **Technology type**: Trench MOSFET
- **Switching speed**: Fast
- **Power consumption**: Low power design, suitable for efficient power management applications
Domain and module applications：
3. Application fields and module description:
1. **Power management**:
IPD053N06N3 G-VB is suitable for various power management modules, such as efficient DC-DC converters and power supplies. The low on-resistance and high current carrying capacity of this MOSFET ensure efficient power conversion and minimal power loss, improving the energy efficiency of the overall system.
2. **Industrial motor control**:
In industrial motor control systems, IPD053N06N3 G-VB can be used as a switching element for motor drivers, especially in applications that require high current and low power consumption. Its stable performance and low heat generation characteristics make it very suitable for controlling DC motors (DC) and stepper motors (Stepper Motor).
3. **Automotive electronics**:
This MOSFET is also widely used in automotive electronic systems, such as electric power steering (EPS), headlight control and electric window control. Its high current handling capability and low on-resistance ensure the reliability and stability of these systems under high load conditions.
4. **Battery Management System**:
IPD053N06N3 G-VB is also suitable for battery management system (BMS), especially in electric vehicles and energy storage systems. Its high current capacity and low on-resistance help improve the efficiency of the charging and discharging process, extend battery life, and improve the safety and reliability of the system.
1. **Power management**:
IPD053N06N3 G-VB is suitable for various power management modules, such as efficient DC-DC converters and power supplies. The low on-resistance and high current carrying capacity of this MOSFET ensure efficient power conversion and minimal power loss, improving the energy efficiency of the overall system.
2. **Industrial motor control**:
In industrial motor control systems, IPD053N06N3 G-VB can be used as a switching element for motor drivers, especially in applications that require high current and low power consumption. Its stable performance and low heat generation characteristics make it very suitable for controlling DC motors (DC) and stepper motors (Stepper Motor).
3. **Automotive electronics**:
This MOSFET is also widely used in automotive electronic systems, such as electric power steering (EPS), headlight control and electric window control. Its high current handling capability and low on-resistance ensure the reliability and stability of these systems under high load conditions.
4. **Battery Management System**:
IPD053N06N3 G-VB is also suitable for battery management system (BMS), especially in electric vehicles and energy storage systems. Its high current capacity and low on-resistance help improve the efficiency of the charging and discharging process, extend battery life, and improve the safety and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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