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IPD04N03LA G-VB Product details
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**
IPD04N03LA G-VB is a high-performance single N-channel MOSFET with a TO252 package type. This MOSFET adopts advanced Trench process and has extremely low on-resistance and high current carrying capacity. Its maximum drain-source voltage is 30V and the maximum continuous drain current can reach 100A, which is suitable for various applications of efficient energy conversion. IPD04N03LA G-VB is particularly suitable for applications that require low power consumption and high switching frequency, and can provide reliable performance under high current and high efficiency operating conditions.
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**IPD04N03LA G-VB
IPD04N03LA G-VB is a high-performance single N-channel MOSFET with a TO252 package type. This MOSFET adopts advanced Trench process and has extremely low on-resistance and high current carrying capacity. Its maximum drain-source voltage is 30V and the maximum continuous drain current can reach 100A, which is suitable for various applications of efficient energy conversion. IPD04N03LA G-VB is particularly suitable for applications that require low power consumption and high switching frequency, and can provide reliable performance under high current and high efficiency operating conditions.
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**IPD04N03LA G-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench (trench process)
- **Operating temperature range**: -55°C to 175°C
- **Switching performance**:
- With faster switching speed, suitable for high frequency applications.
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**IPD04N03LA G-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench (trench process)
- **Operating temperature range**: -55°C to 175°C
- **Switching performance**:
- With faster switching speed, suitable for high frequency applications.
---
**IPD04N03LA G-VB
Domain and module applications：
**
1. **Efficient Power Management**: The IPD04N03LA G-VB MOSFET is suitable for a variety of power management applications, such as DC-DC converters and battery management systems. Its low on-resistance, especially at high gate voltages, ensures energy efficiency under high current conditions, reducing power loss and heat generation, thereby improving the overall efficiency and reliability of the system.
2. **Automotive Electronics**: In automotive electronic systems, such as battery management and motor drive systems in electric vehicles, the high current capability and low on-resistance of this MOSFET enable it to effectively manage large current flows and provide stable and reliable performance. It performs particularly well in automotive applications that require high efficiency and low power consumption.
3. **Industrial Equipment**: In power modules and motor drivers for industrial equipment, the high current carrying capability and low RDS(ON) of the IPD04N03LA G-VB make it a good fit. Whether used for motor control or power conversion, the excellent performance of this MOSFET can improve the operating efficiency of equipment and reduce maintenance costs.
4. **Consumer Electronics**: In the field of consumer electronics, such as smartphone chargers, laptop power adapters, etc., the efficient energy conversion and low power consumption characteristics of IPD04N03LA G-VB ensure fast charging and stable operation of the device. This MOSFET can provide excellent current handling capability and efficient power management in these applications.
1. **Efficient Power Management**: The IPD04N03LA G-VB MOSFET is suitable for a variety of power management applications, such as DC-DC converters and battery management systems. Its low on-resistance, especially at high gate voltages, ensures energy efficiency under high current conditions, reducing power loss and heat generation, thereby improving the overall efficiency and reliability of the system.
2. **Automotive Electronics**: In automotive electronic systems, such as battery management and motor drive systems in electric vehicles, the high current capability and low on-resistance of this MOSFET enable it to effectively manage large current flows and provide stable and reliable performance. It performs particularly well in automotive applications that require high efficiency and low power consumption.
3. **Industrial Equipment**: In power modules and motor drivers for industrial equipment, the high current carrying capability and low RDS(ON) of the IPD04N03LA G-VB make it a good fit. Whether used for motor control or power conversion, the excellent performance of this MOSFET can improve the operating efficiency of equipment and reduce maintenance costs.
4. **Consumer Electronics**: In the field of consumer electronics, such as smartphone chargers, laptop power adapters, etc., the efficient energy conversion and low power consumption characteristics of IPD04N03LA G-VB ensure fast charging and stable operation of the device. This MOSFET can provide excellent current handling capability and efficient power management in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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