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IPD048N06L3 G-VB Product details
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1. IPD048N06L3 G-VB Product Introduction
IPD048N06L3 G-VB is a high-performance N-channel MOSFET in TO252 package and uses advanced Trench technology. It is designed to meet the needs of high current and low on-resistance, making it an ideal choice for power management and conversion applications. With a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of up to 97A, this makes this MOSFET suitable for a variety of applications requiring high efficiency and high current. It demonstrates excellent on-resistance at different gate voltages, further enhancing its application value in high-efficiency power conversion.
IPD048N06L3 G-VB is a high-performance N-channel MOSFET in TO252 package and uses advanced Trench technology. It is designed to meet the needs of high current and low on-resistance, making it an ideal choice for power management and conversion applications. With a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of up to 97A, this makes this MOSFET suitable for a variety of applications requiring high efficiency and high current. It demonstrates excellent on-resistance at different gate voltages, further enhancing its application value in high-efficiency power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of IPD048N06L3 G-VB
| **Parameter** | **Value** |
|---------------------------|----------------------------------|
| **Package** | TO252 |
| **Channel type** | Single N-channel (Single-N) |
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Through voltage (Vth)** | 3V |
| **On-resistance RDS(ON)** | 12mΩ @ VGS=4.5V；4.5mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 97A |
| **Technology** | Trench (trench technology) |
IPD048N06L3 G-VB With low on-resistance and high current handling capability, it is suitable for power management and conversion applications requiring high performance and reliability.
| **Parameter** | **Value** |
|---------------------------|----------------------------------|
| **Package** | TO252 |
| **Channel type** | Single N-channel (Single-N) |
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Through voltage (Vth)** | 3V |
| **On-resistance RDS(ON)** | 12mΩ @ VGS=4.5V；4.5mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 97A |
| **Technology** | Trench (trench technology) |
IPD048N06L3 G-VB With low on-resistance and high current handling capability, it is suitable for power management and conversion applications requiring high performance and reliability.
Domain and module applications：
III. Application fields and module examples of IPD048N06L3 G-VB
1. **Power management system**:
In power management systems, IPD048N06L3 G-VB can be used as an efficient switching element in DC-DC converters to reduce energy loss and improve system efficiency. This is essential for the power supply of modern high-performance computers and communication equipment.
2. **Electric vehicle charging station**:
This MOSFET is very suitable for use in the power conversion module of electric vehicle charging stations. Its high current carrying capacity and low on-resistance can ensure high efficiency and low heat loss during the charging process, improving the overall charging efficiency.
3. **LED driver**:
In LED drivers, IPD048N06L3 G-VB can be used to drive high-power LED lighting systems to ensure stable operation under high current conditions, while minimizing energy loss and extending the service life of LEDs.
4. **High-efficiency power adapter**:
This MOSFET is suitable for high-efficiency power adapters, especially in applications that require fast charging and efficient energy conversion. It can effectively reduce the power consumption and heat generation of the adapter and improve the working stability of the device.
1. **Power management system**:
In power management systems, IPD048N06L3 G-VB can be used as an efficient switching element in DC-DC converters to reduce energy loss and improve system efficiency. This is essential for the power supply of modern high-performance computers and communication equipment.
2. **Electric vehicle charging station**:
This MOSFET is very suitable for use in the power conversion module of electric vehicle charging stations. Its high current carrying capacity and low on-resistance can ensure high efficiency and low heat loss during the charging process, improving the overall charging efficiency.
3. **LED driver**:
In LED drivers, IPD048N06L3 G-VB can be used to drive high-power LED lighting systems to ensure stable operation under high current conditions, while minimizing energy loss and extending the service life of LEDs.
4. **High-efficiency power adapter**:
This MOSFET is suitable for high-efficiency power adapters, especially in applications that require fast charging and efficient energy conversion. It can effectively reduce the power consumption and heat generation of the adapter and improve the working stability of the device.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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