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IPD040N03L-VB Product details
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IPD040N03L-VB Product Introduction
IPD040N03L-VB is a single N-channel power MOSFET in TO252 package, designed for high-efficiency switching applications. The MOSFET has a drain-source voltage (VDS) of 30V and can handle drain currents (ID) of up to 70A, making it an excellent performer in applications that require high current carrying. It uses trench technology to provide superior on-resistance performance. At a gate drive of 4.5V, its on-resistance is 9mΩ, and it drops to 7mΩ at a gate voltage of 10V. This low on-resistance helps reduce power loss and improve system efficiency. Its lower threshold voltage (Vth) of 1.7V allows it to effectively conduct at lower gate voltages, making it suitable for applications that require low-voltage drive.
IPD040N03L-VB is a single N-channel power MOSFET in TO252 package, designed for high-efficiency switching applications. The MOSFET has a drain-source voltage (VDS) of 30V and can handle drain currents (ID) of up to 70A, making it an excellent performer in applications that require high current carrying. It uses trench technology to provide superior on-resistance performance. At a gate drive of 4.5V, its on-resistance is 9mΩ, and it drops to 7mΩ at a gate voltage of 10V. This low on-resistance helps reduce power loss and improve system efficiency. Its lower threshold voltage (Vth) of 1.7V allows it to effectively conduct at lower gate voltages, making it suitable for applications that require low-voltage drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter| Value| Unit|
|---------------------|---------------------|---------|
| Package| TO252 | - |
| Channel type| Single N-channel| - |
| Drain-source voltage (VDS) | 30 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 1.7 | V |
| On-resistance (RDS(ON)) | 9mΩ@VGS=4.5V | mΩ |
| On-resistance (RDS(ON)) | 7mΩ@VGS=10V | mΩ |
| Drain current (ID) | 70 | A |
| Technology type| Trench | - |
| Parameter| Value| Unit|
|---------------------|---------------------|---------|
| Package| TO252 | - |
| Channel type| Single N-channel| - |
| Drain-source voltage (VDS) | 30 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 1.7 | V |
| On-resistance (RDS(ON)) | 9mΩ@VGS=4.5V | mΩ |
| On-resistance (RDS(ON)) | 7mΩ@VGS=10V | mΩ |
| Drain current (ID) | 70 | A |
| Technology type| Trench | - |
Domain and module applications：
Applications and modules
1. **Battery-powered devices**: The low on-resistance and low threshold voltage of IPD040N03L-VB make it very suitable for battery-powered devices. In mobile devices and portable electronics, this MOSFET can be used as a power switch or power management module to help improve energy efficiency and extend battery life.
2. **DC-DC converter**: In DC-DC converters, the high current capability and low conduction loss of IPD040N03L-VB can effectively improve conversion efficiency. It is suitable for various high-frequency switching power supplies, such as computer power supplies, server power supplies, and other power modules that require high-efficiency conversion.
3. **Automotive electronics**: This MOSFET is also suitable for automotive electronics, such as on-board power management and motor control. Its high current carrying capacity and good conduction performance enable it to cope with high load requirements in automotive electronic equipment, ensuring system stability and reliability.
4. **Home appliances and industrial control**: The high efficiency and reliability of IPD040N03L-VB make it an ideal choice in home appliances and industrial control systems. It can be used for switch control in home appliances and power management in industrial equipment to ensure efficient operation and long life of the equipment.
IPD040N03L-VB is a high-performance MOSFET that provides excellent performance and high efficiency in a variety of applications with its low on-resistance and high current capability.
1. **Battery-powered devices**: The low on-resistance and low threshold voltage of IPD040N03L-VB make it very suitable for battery-powered devices. In mobile devices and portable electronics, this MOSFET can be used as a power switch or power management module to help improve energy efficiency and extend battery life.
2. **DC-DC converter**: In DC-DC converters, the high current capability and low conduction loss of IPD040N03L-VB can effectively improve conversion efficiency. It is suitable for various high-frequency switching power supplies, such as computer power supplies, server power supplies, and other power modules that require high-efficiency conversion.
3. **Automotive electronics**: This MOSFET is also suitable for automotive electronics, such as on-board power management and motor control. Its high current carrying capacity and good conduction performance enable it to cope with high load requirements in automotive electronic equipment, ensuring system stability and reliability.
4. **Home appliances and industrial control**: The high efficiency and reliability of IPD040N03L-VB make it an ideal choice in home appliances and industrial control systems. It can be used for switch control in home appliances and power management in industrial equipment to ensure efficient operation and long life of the equipment.
IPD040N03L-VB is a high-performance MOSFET that provides excellent performance and high efficiency in a variety of applications with its low on-resistance and high current capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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