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IPD040N03LG-VB Product details
Back to previous pageProduct introduction：
1. IPD040N03LG-VB Product Introduction
IPD040N03LG-VB is a high-performance single N-channel MOSFET in TO252 package. It is designed with Trench technology to provide high current handling capability and low on-resistance. The device has a maximum drain-source voltage (VDS) of 30V, making it suitable for low to medium voltage applications. Its low threshold voltage (Vth) is 1.7V, allowing it to be turned on at a lower gate drive voltage for efficient conduction performance. Due to its low RDS(ON) and high ID, this MOSFET is very suitable for applications with high power density and high efficiency requirements.
IPD040N03LG-VB is a high-performance single N-channel MOSFET in TO252 package. It is designed with Trench technology to provide high current handling capability and low on-resistance. The device has a maximum drain-source voltage (VDS) of 30V, making it suitable for low to medium voltage applications. Its low threshold voltage (Vth) is 1.7V, allowing it to be turned on at a lower gate drive voltage for efficient conduction performance. Due to its low RDS(ON) and high ID, this MOSFET is very suitable for applications with high power density and high efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. IPD040N03LG-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
- **Thermal resistance (RθJA)**: 62°C/W
- **Gate charge (Qg)**: 80nC
- **Switching time**:
- Turn-on time (ton): 18ns
- Turn-off time (toff): 50ns
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
- **Thermal resistance (RθJA)**: 62°C/W
- **Gate charge (Qg)**: 80nC
- **Switching time**:
- Turn-on time (ton): 18ns
- Turn-off time (toff): 50ns
Domain and module applications：
III. Application fields and modules of IPD040N03LG-VB
1. **Consumer electronics**
The low on-resistance and high current capability of IPD040N03LG-VB make it suitable for power management modules in consumer electronics, such as smartphones, tablets and other portable devices. It can effectively reduce power consumption and improve battery life, and is suitable for use in DC-DC converters and battery protection circuits.
2. **Automotive electronics**
In the automotive field, this MOSFET can be used in battery management systems and electric drive control systems. Its high current handling capability and low on-resistance ensure efficient power conversion and stable power supply in electric vehicles, which is crucial to improving the overall efficiency of automotive electronic systems.
3. **Industrial control**
In industrial control systems, IPD040N03LG-VB can be used in power switches and regulators, such as motor drive modules and power converters. Its fast switching characteristics and high current capability make it suitable for application scenarios with strict requirements on power density and response speed.
4. **Power Management System**
This MOSFET is also very suitable for use in various power management systems, such as computer power supplies, server power modules and other high-performance power systems. Its low RDS(ON) and high current handling capability can effectively improve the overall efficiency and stability of the system.
1. **Consumer electronics**
The low on-resistance and high current capability of IPD040N03LG-VB make it suitable for power management modules in consumer electronics, such as smartphones, tablets and other portable devices. It can effectively reduce power consumption and improve battery life, and is suitable for use in DC-DC converters and battery protection circuits.
2. **Automotive electronics**
In the automotive field, this MOSFET can be used in battery management systems and electric drive control systems. Its high current handling capability and low on-resistance ensure efficient power conversion and stable power supply in electric vehicles, which is crucial to improving the overall efficiency of automotive electronic systems.
3. **Industrial control**
In industrial control systems, IPD040N03LG-VB can be used in power switches and regulators, such as motor drive modules and power converters. Its fast switching characteristics and high current capability make it suitable for application scenarios with strict requirements on power density and response speed.
4. **Power Management System**
This MOSFET is also very suitable for use in various power management systems, such as computer power supplies, server power modules and other high-performance power systems. Its low RDS(ON) and high current handling capability can effectively improve the overall efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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