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IPD040N03L G-VB Product details
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1. IPD040N03L G-VB Product Introduction
IPD040N03L G-VB is a high-performance single N-channel MOSFET in TO252 package. This MOSFET adopts advanced Trench technology and has excellent conductivity and switching performance. Its maximum drain-source voltage (VDS) is 30V, which is suitable for low-voltage, high-current power switching applications. The on-resistance of this MOSFET is 3mΩ at VGS=4.5V, and it drops to 2mΩ at VGS=10V, which makes it perform well under high current conditions. With a maximum drain current (ID) of up to 120A, it is very suitable for use in application scenarios requiring efficient switching and low power consumption.
IPD040N03L G-VB is a high-performance single N-channel MOSFET in TO252 package. This MOSFET adopts advanced Trench technology and has excellent conductivity and switching performance. Its maximum drain-source voltage (VDS) is 30V, which is suitable for low-voltage, high-current power switching applications. The on-resistance of this MOSFET is 3mΩ at VGS=4.5V, and it drops to 2mΩ at VGS=10V, which makes it perform well under high current conditions. With a maximum drain current (ID) of up to 120A, it is very suitable for use in application scenarios requiring efficient switching and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD040N03L G-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench MOSFET technology
- **Power dissipation**: Depends on the thermal resistance characteristics of the package
- **Switching speed**: High-speed switching capability, suitable for high-frequency applications
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench MOSFET technology
- **Power dissipation**: Depends on the thermal resistance characteristics of the package
- **Switching speed**: High-speed switching capability, suitable for high-frequency applications
Domain and module applications：
III. Application Fields and Modules
1. **High-efficiency power conversion**:
IPD040N03L G-VB excels in high-efficiency power conversion applications, especially in DC-DC converters. Its low on-resistance and high current capability make it ideal for high-load switches in power modules, such as laptop power supplies, server power supplies, and power management systems.
2. **Motor drive control**:
This MOSFET is suitable for motor drive control systems and can efficiently handle large currents. It is suitable for use in electric vehicle motor drive systems, power tools, and motor drive modules in home appliances. Its low on-resistance can improve motor efficiency and response speed, ensuring smooth operation.
3. **Battery management system**:
In battery management systems, IPD040N03L G-VB can be used for battery charging and discharging control, and is suitable for protection and energy management of lithium battery packs. Its high current handling capability and low power consumption characteristics enable it to effectively manage the battery charging and discharging process.
4. **LED drive circuit**:
Due to its excellent switching performance and low power consumption, this MOSFET is also suitable for LED lighting drive circuits. Especially in high-brightness LED applications that require high efficiency and low heat generation, such as automotive lighting and high-power LED lighting systems.
IPD040N03L G-VB is widely used in various electronic devices and systems that require high power and high efficiency due to its excellent electrical characteristics and high efficiency performance.
1. **High-efficiency power conversion**:
IPD040N03L G-VB excels in high-efficiency power conversion applications, especially in DC-DC converters. Its low on-resistance and high current capability make it ideal for high-load switches in power modules, such as laptop power supplies, server power supplies, and power management systems.
2. **Motor drive control**:
This MOSFET is suitable for motor drive control systems and can efficiently handle large currents. It is suitable for use in electric vehicle motor drive systems, power tools, and motor drive modules in home appliances. Its low on-resistance can improve motor efficiency and response speed, ensuring smooth operation.
3. **Battery management system**:
In battery management systems, IPD040N03L G-VB can be used for battery charging and discharging control, and is suitable for protection and energy management of lithium battery packs. Its high current handling capability and low power consumption characteristics enable it to effectively manage the battery charging and discharging process.
4. **LED drive circuit**:
Due to its excellent switching performance and low power consumption, this MOSFET is also suitable for LED lighting drive circuits. Especially in high-brightness LED applications that require high efficiency and low heat generation, such as automotive lighting and high-power LED lighting systems.
IPD040N03L G-VB is widely used in various electronic devices and systems that require high power and high efficiency due to its excellent electrical characteristics and high efficiency performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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