中文
English
IPD03NLB G-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IPD03NLB G-VB is a high-performance single N-channel MOSFET in a TO252 package with excellent electrical performance and durability. This MOSFET uses advanced Trench technology, has extremely low on-resistance and high current handling capability, and is very suitable for high-efficiency and high-power applications. Its maximum drain-source voltage is 30V and the rated current is 120A, making it an excellent performer in applications requiring high efficiency and low power consumption.
IPD03NLB G-VB is a high-performance single N-channel MOSFET in a TO252 package with excellent electrical performance and durability. This MOSFET uses advanced Trench technology, has extremely low on-resistance and high current handling capability, and is very suitable for high-efficiency and high-power applications. Its maximum drain-source voltage is 30V and the rated current is 120A, making it an excellent performer in applications requiring high efficiency and low power consumption.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Rated current (ID)**: 120A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Rated current (ID)**: 120A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Application fields and module examples:
- **Power conversion module**: The low on-resistance and high current capability of IPD03NLB G-VB make it excellent in power converters and DC-DC converters. It is suitable for applications that require high efficiency and high power handling, such as server power modules, industrial power supplies, and power conversion systems for electric vehicles.
- **Automotive electronics**: In automotive applications, this MOSFET can be used in power management modules such as electric steering systems, starting systems, and on-board battery management systems, providing efficient switching performance and durability.
- **Consumer electronics**: In consumer electronics, the high current handling capability and low on-resistance of IPD03NLB G-VB make it suitable for fast charging circuits, battery protection, and load switches, improving the performance and energy efficiency of the device.
- **Power switch**: This MOSFET can be used in a variety of power switching applications, such as power protection, power regulators, and motor drive systems, and can maintain stable operation under high power loads.
- **Communication Equipment**: In communications infrastructure, the IPD03NLB G-VB’s high current handling capability and low on-resistance make it suitable for base station power supplies and other communications equipment that require high power and high efficiency.
- **Power conversion module**: The low on-resistance and high current capability of IPD03NLB G-VB make it excellent in power converters and DC-DC converters. It is suitable for applications that require high efficiency and high power handling, such as server power modules, industrial power supplies, and power conversion systems for electric vehicles.
- **Automotive electronics**: In automotive applications, this MOSFET can be used in power management modules such as electric steering systems, starting systems, and on-board battery management systems, providing efficient switching performance and durability.
- **Consumer electronics**: In consumer electronics, the high current handling capability and low on-resistance of IPD03NLB G-VB make it suitable for fast charging circuits, battery protection, and load switches, improving the performance and energy efficiency of the device.
- **Power switch**: This MOSFET can be used in a variety of power switching applications, such as power protection, power regulators, and motor drive systems, and can maintain stable operation under high power loads.
- **Communication Equipment**: In communications infrastructure, the IPD03NLB G-VB’s high current handling capability and low on-resistance make it suitable for base station power supplies and other communications equipment that require high power and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
