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IPD03N03LB G-VB Product details
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IPD03N03LB G-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current applications. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. This MOSFET uses advanced Trench technology and has an extremely low on-resistance of up to 2mΩ at VGS=10V, while supporting a drain current (ID) of up to 120A. These features make IPD03N03LB G-VB very suitable for high-efficiency power management and high-current switching applications, which can significantly reduce conduction losses and improve overall system efficiency.
**
IPD03N03LB G-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current applications. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. This MOSFET uses advanced Trench technology and has an extremely low on-resistance of up to 2mΩ at VGS=10V, while supporting a drain current (ID) of up to 120A. These features make IPD03N03LB G-VB very suitable for high-efficiency power management and high-current switching applications, which can significantly reduce conduction losses and improve overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
：**
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
- **Power consumption**: Low conduction loss, suitable for high-efficiency power supply applications
**
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
- **Power consumption**: Low conduction loss, suitable for high-efficiency power supply applications
**
Domain and module applications：
：**
1. **Power Management Systems**: IPD03N03LB G-VB excels in DC-DC converters, AC-DC power supplies, and high-efficiency power management modules. Its low on-resistance can reduce power loss, improve system energy efficiency and stability, and is suitable for use in scenarios with high power efficiency requirements.
2. **Electric and Hybrid Vehicles**: In the motor drive system, charging controller, and battery management system of electric vehicles, this MOSFET can be used for high-current switching, providing efficient power conversion and protection functions.
3. **Industrial Automation**: Its high current handling capability and low on-resistance enable it to perform well in industrial automation equipment, such as motor drives and high-power switches, ensuring efficient operation and long life of the equipment.
4. **Consumer Electronic Devices**: IPD03N03LB G-VB is suitable for power management units (PMUs) in smart home appliances and high-performance mobile devices, which can effectively manage power, extend battery life, and improve the overall efficiency of the device.
With its high current handling capability and very low on-resistance, this MOSFET is suitable for a variety of applications requiring efficient power switching and current control.
1. **Power Management Systems**: IPD03N03LB G-VB excels in DC-DC converters, AC-DC power supplies, and high-efficiency power management modules. Its low on-resistance can reduce power loss, improve system energy efficiency and stability, and is suitable for use in scenarios with high power efficiency requirements.
2. **Electric and Hybrid Vehicles**: In the motor drive system, charging controller, and battery management system of electric vehicles, this MOSFET can be used for high-current switching, providing efficient power conversion and protection functions.
3. **Industrial Automation**: Its high current handling capability and low on-resistance enable it to perform well in industrial automation equipment, such as motor drives and high-power switches, ensuring efficient operation and long life of the equipment.
4. **Consumer Electronic Devices**: IPD03N03LB G-VB is suitable for power management units (PMUs) in smart home appliances and high-performance mobile devices, which can effectively manage power, extend battery life, and improve the overall efficiency of the device.
With its high current handling capability and very low on-resistance, this MOSFET is suitable for a variety of applications requiring efficient power switching and current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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