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IPD03N03LA G-VB Product details
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IPD03N03LA G-VB MOSFET Product Introduction
The IPD03N03LA G-VB is a high-performance single N-channel MOSFET in a TO252 package, designed for high current applications. The device has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V, combined with its extremely low on-resistance (RDS(ON)) and high current carrying capacity, making it an excellent performer in applications requiring high performance and low power consumption. Using Trench technology, the IPD03N03LA G-VB is able to provide excellent switching performance and energy efficiency, making it an ideal choice for power management and load switching applications.
The IPD03N03LA G-VB is a high-performance single N-channel MOSFET in a TO252 package, designed for high current applications. The device has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V, combined with its extremely low on-resistance (RDS(ON)) and high current carrying capacity, making it an excellent performer in applications requiring high performance and low power consumption. Using Trench technology, the IPD03N03LA G-VB is able to provide excellent switching performance and energy efficiency, making it an ideal choice for power management and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS = 2.5V
- 2.5mΩ @ VGS = 4.5V
- **Drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS = 2.5V
- 2.5mΩ @ VGS = 4.5V
- **Drain current (ID)**: 120A
- **Technology type**: Trench technology
Domain and module applications：
Applicable fields and application modules
IPD03N03LA G-VB MOSFET has outstanding performance in various application fields due to its high current carrying capacity and low on-resistance:
1. **Power management**: In high-efficiency power management systems such as DC-DC converters and power modules, IPD03N03LA G-VB can effectively reduce energy loss and improve overall system efficiency. Its low RDS(ON) makes it very suitable for use under high load conditions.
2. **Load switching**: This MOSFET is suitable for high-current load switching, such as motor drive and high-power load control. Its high current handling capability ensures reliability and low heat generation during switching operations.
3. **Power tools**: In power tools and electric vehicle controllers, IPD03N03LA G-VB provides stable current switching functions, can support high-power operation, and help optimize battery efficiency.
4. **Consumer Electronics**: In the battery management systems of consumer electronics such as smartphones and laptops, the IPD03N03LA G-VB helps achieve efficient battery charging and discharging processes, improving the energy efficiency and operating stability of the device.
In summary, the IPD03N03LA G-VB is an ideal choice for a variety of high-performance and high-power applications due to its excellent current handling capability and low on-resistance.
IPD03N03LA G-VB MOSFET has outstanding performance in various application fields due to its high current carrying capacity and low on-resistance:
1. **Power management**: In high-efficiency power management systems such as DC-DC converters and power modules, IPD03N03LA G-VB can effectively reduce energy loss and improve overall system efficiency. Its low RDS(ON) makes it very suitable for use under high load conditions.
2. **Load switching**: This MOSFET is suitable for high-current load switching, such as motor drive and high-power load control. Its high current handling capability ensures reliability and low heat generation during switching operations.
3. **Power tools**: In power tools and electric vehicle controllers, IPD03N03LA G-VB provides stable current switching functions, can support high-power operation, and help optimize battery efficiency.
4. **Consumer Electronics**: In the battery management systems of consumer electronics such as smartphones and laptops, the IPD03N03LA G-VB helps achieve efficient battery charging and discharging processes, improving the energy efficiency and operating stability of the device.
In summary, the IPD03N03LA G-VB is an ideal choice for a variety of high-performance and high-power applications due to its excellent current handling capability and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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