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IPD038N06N3 G-VB Product details
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1. Product Introduction
IPD038N06N3 G-VB is a high-performance N-channel power MOSFET in TO252 package. Its design focuses on providing low on-resistance and high current handling capability, suitable for power management applications requiring high efficiency. This MOSFET uses Trench technology, which enables it to provide up to 97A of drain current (ID) at a drain-source voltage (VDS) of 60V with extremely low on-resistance. This makes the IPD038N06N3 G-VB very suitable for use in high-efficiency switching power supplies and motor drives.
IPD038N06N3 G-VB is a high-performance N-channel power MOSFET in TO252 package. Its design focuses on providing low on-resistance and high current handling capability, suitable for power management applications requiring high efficiency. This MOSFET uses Trench technology, which enables it to provide up to 97A of drain current (ID) at a drain-source voltage (VDS) of 60V with extremely low on-resistance. This makes the IPD038N06N3 G-VB very suitable for use in high-efficiency switching power supplies and motor drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Parameter Description
- **Package: ** TO252
- **Configuration: ** Single-N-Channel
- **Drain-Source Voltage (VDS): ** 60V
- **Gate-Source Voltage (VGS): ** ±20V
- **Threshold Voltage (Vth): ** 3V
- **On-Resistance (RDS(ON)): **
- 12mΩ @ VGS = 4.5V
- 4.5mΩ @ VGS = 10V
- **Drain Current (ID): ** 97A
- **Technology: ** Trench Technology
- **Power Dissipation (Ptot): ** 94W
- **Operating Temperature Range (Tj): ** -55°C Up to 150°C
- **Package: ** TO252
- **Configuration: ** Single-N-Channel
- **Drain-Source Voltage (VDS): ** 60V
- **Gate-Source Voltage (VGS): ** ±20V
- **Threshold Voltage (Vth): ** 3V
- **On-Resistance (RDS(ON)): **
- 12mΩ @ VGS = 4.5V
- 4.5mΩ @ VGS = 10V
- **Drain Current (ID): ** 97A
- **Technology: ** Trench Technology
- **Power Dissipation (Ptot): ** 94W
- **Operating Temperature Range (Tj): ** -55°C Up to 150°C
Domain and module applications：
3. Applications and modules
IPD038N06N3 G-VB MOSFET is suitable for multiple high-efficiency and high-current demanding fields and modules, including:
- **Switching Power Supply (SMPS): ** Due to its low on-resistance and high drain current capability, this MOSFET can be used as the main switching device in the switching power supply to improve the efficiency of the power supply and reduce power loss, especially in DC-DC converters.
- **Motor Driver: ** In motor control systems, such as stepper motors and DC motor drivers, IPD038N06N3 G-VB can provide high current and low switching losses, which helps improve the efficiency and response speed of the motor.
- **Automotive Electronics: ** Suitable for high-power switching applications in automotive electronic systems, such as power window control, power seat adjustment, and LED lamp drivers. Its high current capability and low on-resistance help improve the overall performance and reliability of the system.
- **Uninterruptible Power Supply (UPS):** In UPS systems, the high current handling capability and low on-resistance of MOSFET can effectively support power switching and backup power conversion, ensuring the stability and efficiency of the power supply.
- **Computer Power Management:** In computer power modules, such as ATX power supplies, IPD038N06N3 G-VB can be used as a high-efficiency switching element to reduce energy loss and improve system stability.
IPD038N06N3 G-VB offers a wide range of application possibilities through its excellent switching performance and high current handling capability, especially in electronic devices with high requirements for power and efficiency.
IPD038N06N3 G-VB MOSFET is suitable for multiple high-efficiency and high-current demanding fields and modules, including:
- **Switching Power Supply (SMPS): ** Due to its low on-resistance and high drain current capability, this MOSFET can be used as the main switching device in the switching power supply to improve the efficiency of the power supply and reduce power loss, especially in DC-DC converters.
- **Motor Driver: ** In motor control systems, such as stepper motors and DC motor drivers, IPD038N06N3 G-VB can provide high current and low switching losses, which helps improve the efficiency and response speed of the motor.
- **Automotive Electronics: ** Suitable for high-power switching applications in automotive electronic systems, such as power window control, power seat adjustment, and LED lamp drivers. Its high current capability and low on-resistance help improve the overall performance and reliability of the system.
- **Uninterruptible Power Supply (UPS):** In UPS systems, the high current handling capability and low on-resistance of MOSFET can effectively support power switching and backup power conversion, ensuring the stability and efficiency of the power supply.
- **Computer Power Management:** In computer power modules, such as ATX power supplies, IPD038N06N3 G-VB can be used as a high-efficiency switching element to reduce energy loss and improve system stability.
IPD038N06N3 G-VB offers a wide range of application possibilities through its excellent switching performance and high current handling capability, especially in electronic devices with high requirements for power and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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