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IPD038N04N G-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IPD038N04N G-VB is a single-channel N-type power MOSFET in TO252 package with excellent conduction performance and high current handling capability. Its features include low on-resistance and fast switching speed, suitable for a variety of high-efficiency power management and drive circuits. The device uses trench technology, which enables it to operate stably under high load conditions, with a maximum withstand voltage of 40V and a rated current of up to 85A, suitable for high-current application scenarios.
IPD038N04N G-VB is a single-channel N-type power MOSFET in TO252 package with excellent conduction performance and high current handling capability. Its features include low on-resistance and fast switching speed, suitable for a variety of high-efficiency power management and drive circuits. The device uses trench technology, which enables it to operate stably under high load conditions, with a maximum withstand voltage of 40V and a rated current of up to 85A, suitable for high-current application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ@VGS=4.5V, 5mΩ@VGS=10V
- **Drain current (ID)**: 85A
- **Technology type**: Trench MOSFET
- **Switching speed**: Fast
- **Power consumption**: Low power design, suitable for efficient power management applications
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ@VGS=4.5V, 5mΩ@VGS=10V
- **Drain current (ID)**: 85A
- **Technology type**: Trench MOSFET
- **Switching speed**: Fast
- **Power consumption**: Low power design, suitable for efficient power management applications
Domain and module applications：
III. Application fields and module description:
1. **Automotive electronics**:
IPD038N04N G-VB is commonly used in load driving in automotive electronic control units (ECUs), such as lights, fans, and motor control modules. This MOSFET provides high current drive capability while maintaining low power consumption and heat generation, improving the efficiency and reliability of automotive electronic equipment.
2. **DC-DC converters**:
Due to its low on-resistance and high current handling capability, this device is suitable for use in DC-DC converters, especially modules that require fast switching and efficient energy conversion. In these applications, the fast switching speed of the MOSFET can effectively reduce power losses during the conversion process.
3. **Motor control**:
IPD038N04N G-VB can be used in motor drive modules in industrial and consumer-grade equipment, especially those brushless DC motor (BLDC) control systems that require high efficiency and low noise. By utilizing low RDS(ON) and trench technology, it ensures smooth operation of the motor under high load while reducing heat and energy loss.
4. **Battery Management System**:
This MOSFET is also suitable for battery management systems (BMS) to effectively control current during charging and discharging. Its high current capacity and stable performance ensure the safety and long life of the battery system, especially in electric vehicles and renewable energy storage systems.
1. **Automotive electronics**:
IPD038N04N G-VB is commonly used in load driving in automotive electronic control units (ECUs), such as lights, fans, and motor control modules. This MOSFET provides high current drive capability while maintaining low power consumption and heat generation, improving the efficiency and reliability of automotive electronic equipment.
2. **DC-DC converters**:
Due to its low on-resistance and high current handling capability, this device is suitable for use in DC-DC converters, especially modules that require fast switching and efficient energy conversion. In these applications, the fast switching speed of the MOSFET can effectively reduce power losses during the conversion process.
3. **Motor control**:
IPD038N04N G-VB can be used in motor drive modules in industrial and consumer-grade equipment, especially those brushless DC motor (BLDC) control systems that require high efficiency and low noise. By utilizing low RDS(ON) and trench technology, it ensures smooth operation of the motor under high load while reducing heat and energy loss.
4. **Battery Management System**:
This MOSFET is also suitable for battery management systems (BMS) to effectively control current during charging and discharging. Its high current capacity and stable performance ensure the safety and long life of the battery system, especially in electric vehicles and renewable energy storage systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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