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IPD036N04L G-VB Product details
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**
IPD036N04L G-VB is a single N-channel MOSFET in TO252 package, designed to provide efficient power conversion solutions. This device has low on-resistance (RDS(ON)) and exhibits excellent switching performance at different gate voltages, especially in high current applications. Its 40V drain-source voltage (VDS) and 85A continuous drain current capability make it widely used in various high power density applications.
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**IPD036N04L G-VB
IPD036N04L G-VB is a single N-channel MOSFET in TO252 package, designed to provide efficient power conversion solutions. This device has low on-resistance (RDS(ON)) and exhibits excellent switching performance at different gate voltages, especially in high current applications. Its 40V drain-source voltage (VDS) and 85A continuous drain current capability make it widely used in various high power density applications.
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**IPD036N04L G-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**
- **Package Type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(VDS)**: 40V
- **Gate Drive Voltage(VGS)**: ±20V
- **Threshold Voltage(Vth)**: 2.5V
- **On-Resistance(RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Continuous Drain Current(ID)**: 85A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 175°C
- **Switching Performance**:
- Fast switching times for high frequency applications.
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**IPD036N04L G-VB
- **Package Type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(VDS)**: 40V
- **Gate Drive Voltage(VGS)**: ±20V
- **Threshold Voltage(Vth)**: 2.5V
- **On-Resistance(RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Continuous Drain Current(ID)**: 85A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 175°C
- **Switching Performance**:
- Fast switching times for high frequency applications.
---
**IPD036N04L G-VB
Domain and module applications：
**
1. **Automotive electronics**: The IPD036N04L G-VB MOSFET is particularly suitable for automotive power management systems, especially high-efficiency DC-DC converters, startup systems, and battery management systems. In these modules, its low on-resistance and high current capability ensure maximum energy conversion efficiency and reduce power losses.
2. **Industrial power**: This MOSFET is also very suitable for switch mode power supply (SMPS) and uninterruptible power supply (UPS) modules in the industrial field. Its high current handling capability and low on-resistance help improve the overall efficiency of the system and reduce heat problems, especially in devices that need to operate stably for a long time.
3. **Consumer electronics**: The IPD036N04L G-VB is often used in high-power portable electronic device charging modules, such as laptop power adapters, mobile device fast charging modules, etc. Its fast switching characteristics and low losses ensure efficient energy transmission, meeting the needs of modern electronic products for fast charging and high efficiency.
4. **Motor driver**: In motor control systems, the high switching speed and low on-resistance of MOSFET make it very suitable for inverter modules in motor drives, especially in low-voltage DC motor control. IPD036N04L G-VB can ensure stable current output and efficient power transfer.
1. **Automotive electronics**: The IPD036N04L G-VB MOSFET is particularly suitable for automotive power management systems, especially high-efficiency DC-DC converters, startup systems, and battery management systems. In these modules, its low on-resistance and high current capability ensure maximum energy conversion efficiency and reduce power losses.
2. **Industrial power**: This MOSFET is also very suitable for switch mode power supply (SMPS) and uninterruptible power supply (UPS) modules in the industrial field. Its high current handling capability and low on-resistance help improve the overall efficiency of the system and reduce heat problems, especially in devices that need to operate stably for a long time.
3. **Consumer electronics**: The IPD036N04L G-VB is often used in high-power portable electronic device charging modules, such as laptop power adapters, mobile device fast charging modules, etc. Its fast switching characteristics and low losses ensure efficient energy transmission, meeting the needs of modern electronic products for fast charging and high efficiency.
4. **Motor driver**: In motor control systems, the high switching speed and low on-resistance of MOSFET make it very suitable for inverter modules in motor drives, especially in low-voltage DC motor control. IPD036N04L G-VB can ensure stable current output and efficient power transfer.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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