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IPD035N06L3 G-VB Product details
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1. IPD035N06L3 G-VB Product Introduction
IPD035N06L3 G-VB is a high-performance N-channel MOSFET packaged in TO252. It is designed with advanced Trench technology and can provide excellent performance in a variety of applications. The device has a drain-source voltage (VDS) of 60V and a high current carrying capacity with a maximum current of 97A, which is suitable for applications requiring high current. Its on-resistance RDS(ON) shows very low values at different gate voltages (12mΩ @ VGS=4.5V, 4.5mΩ @ VGS=10V), which ensures that power consumption is minimized, thereby improving the overall efficiency of the system.
IPD035N06L3 G-VB is a high-performance N-channel MOSFET packaged in TO252. It is designed with advanced Trench technology and can provide excellent performance in a variety of applications. The device has a drain-source voltage (VDS) of 60V and a high current carrying capacity with a maximum current of 97A, which is suitable for applications requiring high current. Its on-resistance RDS(ON) shows very low values at different gate voltages (12mΩ @ VGS=4.5V, 4.5mΩ @ VGS=10V), which ensures that power consumption is minimized, thereby improving the overall efficiency of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of IPD035N06L3 G-VB
| **Parameter** | **Value** |
|---------------------------|----------------------------------|
| **Package** | TO252 |
| **Channel type** | Single N-channel (Single-N) |
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Through voltage (Vth)** | 3V |
| **On-resistance RDS(ON)** | 12mΩ @ VGS=4.5V；4.5mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 97A |
| **Technology** | Trench (trench technology) |
With its low on-resistance and high current carrying capability, the device is particularly suitable for use in scenarios of efficient power management and high current conversion.
| **Parameter** | **Value** |
|---------------------------|----------------------------------|
| **Package** | TO252 |
| **Channel type** | Single N-channel (Single-N) |
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Through voltage (Vth)** | 3V |
| **On-resistance RDS(ON)** | 12mΩ @ VGS=4.5V；4.5mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 97A |
| **Technology** | Trench (trench technology) |
With its low on-resistance and high current carrying capability, the device is particularly suitable for use in scenarios of efficient power management and high current conversion.
Domain and module applications：
III. Application fields and module examples of IPD035N06L3 G-VB
1. **Electric vehicles and power management modules**:
In electric vehicles, IPD035N06L3 G-VB can be used in DC-DC conversion modules in battery management systems (BMS) and motor drivers. Due to its high current carrying capacity and low on-resistance, it can effectively reduce heat loss and improve power transmission efficiency.
2. **Power adapter and charger module**:
This MOSFET is widely used in high-efficiency power adapters and charger modules, especially in scenarios where fast charging is required, which can effectively control current and reduce switching losses.
3. **Power modules for servers and data centers**:
In power management modules for servers and data centers, IPD035N06L3 G-VB provides efficient current conversion capabilities, which helps reduce energy consumption and improve system stability and efficiency.
4. **Photovoltaic inverter and power conversion module**:
In solar photovoltaic systems, it can be used in inverters and power conversion modules to ensure efficient current conversion and maximize energy utilization, especially in high-power applications.
1. **Electric vehicles and power management modules**:
In electric vehicles, IPD035N06L3 G-VB can be used in DC-DC conversion modules in battery management systems (BMS) and motor drivers. Due to its high current carrying capacity and low on-resistance, it can effectively reduce heat loss and improve power transmission efficiency.
2. **Power adapter and charger module**:
This MOSFET is widely used in high-efficiency power adapters and charger modules, especially in scenarios where fast charging is required, which can effectively control current and reduce switching losses.
3. **Power modules for servers and data centers**:
In power management modules for servers and data centers, IPD035N06L3 G-VB provides efficient current conversion capabilities, which helps reduce energy consumption and improve system stability and efficiency.
4. **Photovoltaic inverter and power conversion module**:
In solar photovoltaic systems, it can be used in inverters and power conversion modules to ensure efficient current conversion and maximize energy utilization, especially in high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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