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IPD034N06N3 G-VB Product details
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IPD034N06N3 G-VB Product Introduction
IPD034N06N3 G-VB is a single N-channel power MOSFET in TO252 package, designed for high-efficiency switching applications. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and can operate in various harsh environments. This MOSFET uses advanced trench technology and has excellent on-resistance performance at different gate voltages. For example, the on-resistance is 12mΩ at 4.5V gate drive, and it drops to 4.5mΩ at 10V gate voltage, further improving efficiency and power density. Its maximum continuous drain current (ID) is 97A, which is suitable for high current density applications.
IPD034N06N3 G-VB is a single N-channel power MOSFET in TO252 package, designed for high-efficiency switching applications. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and can operate in various harsh environments. This MOSFET uses advanced trench technology and has excellent on-resistance performance at different gate voltages. For example, the on-resistance is 12mΩ at 4.5V gate drive, and it drops to 4.5mΩ at 10V gate voltage, further improving efficiency and power density. Its maximum continuous drain current (ID) is 97A, which is suitable for high current density applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter| Value| Unit|
|---------------------|---------------------|---------|
| Package| TO252 | - |
| Channel type| Single N-channel| - |
| Drain-source voltage (VDS) | 60 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 3 | V |
| On-resistance (RDS(ON)) | 12mΩ@VGS=4.5V | mΩ |
| On-resistance (RDS(ON)) | 4.5mΩ@VGS=10V | mΩ |
| Drain current (ID) | 97 | A |
| Technology type| Trench | - |
| Parameter| Value| Unit|
|---------------------|---------------------|---------|
| Package| TO252 | - |
| Channel type| Single N-channel| - |
| Drain-source voltage (VDS) | 60 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 3 | V |
| On-resistance (RDS(ON)) | 12mΩ@VGS=4.5V | mΩ |
| On-resistance (RDS(ON)) | 4.5mΩ@VGS=10V | mΩ |
| Drain current (ID) | 97 | A |
| Technology type| Trench | - |
Domain and module applications：
Applications and modules
1. **Automotive electronics**: The high current carrying capacity and low on-resistance of this MOSFET make it ideal for automotive electronics applications such as motor drives and battery management systems (BMS). In electric vehicles, the device can be used to control the efficient switching of motors, providing smooth current control and fast response.
2. **DC-DC converters**: In the field of power conversion, the low conduction loss and high efficiency of the IPD034N06N3 G-VB are particularly suitable for high-frequency switching power supplies and DC-DC converters. Its low on-resistance can reduce power losses and improve overall energy efficiency, making it very suitable for use in power management modules in server power supplies and communication equipment.
3. **Industrial power**: The high current capability and excellent heat dissipation performance of this MOSFET make it an ideal choice for industrial power modules. It can efficiently switch and control high-power loads in industrial automation equipment, such as motor control and high-power inverter modules.
4. **Consumer Electronics**: This device is suitable for switching applications in high-power consumer electronic devices, such as LED driver power supplies and power management modules in computing devices. Its low on-resistance and high switching speed help improve the energy efficiency of the device and extend battery life.
The IPD034N06N3 G-VB is a high-performance MOSFET that can meet the needs of a wide range of power applications, especially those with stringent requirements for high efficiency and low loss.
1. **Automotive electronics**: The high current carrying capacity and low on-resistance of this MOSFET make it ideal for automotive electronics applications such as motor drives and battery management systems (BMS). In electric vehicles, the device can be used to control the efficient switching of motors, providing smooth current control and fast response.
2. **DC-DC converters**: In the field of power conversion, the low conduction loss and high efficiency of the IPD034N06N3 G-VB are particularly suitable for high-frequency switching power supplies and DC-DC converters. Its low on-resistance can reduce power losses and improve overall energy efficiency, making it very suitable for use in power management modules in server power supplies and communication equipment.
3. **Industrial power**: The high current capability and excellent heat dissipation performance of this MOSFET make it an ideal choice for industrial power modules. It can efficiently switch and control high-power loads in industrial automation equipment, such as motor control and high-power inverter modules.
4. **Consumer Electronics**: This device is suitable for switching applications in high-power consumer electronic devices, such as LED driver power supplies and power management modules in computing devices. Its low on-resistance and high switching speed help improve the energy efficiency of the device and extend battery life.
The IPD034N06N3 G-VB is a high-performance MOSFET that can meet the needs of a wide range of power applications, especially those with stringent requirements for high efficiency and low loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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