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IPD031N06L3 G-VB Product details
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1. IPD031N06L3 G-VB Product Introduction
IPD031N06L3 G-VB is a single N-channel MOSFET in TO252 package. It features efficient current handling capability and low on-resistance, and is designed for applications with high current and low conduction losses. The device has a maximum drain voltage (VDS) of 60V, a gate voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. Its RDS(ON) exhibits excellent conduction performance at different gate drive voltages, and is particularly suitable for applications that require high power density and high efficiency.
IPD031N06L3 G-VB is a single N-channel MOSFET in TO252 package. It features efficient current handling capability and low on-resistance, and is designed for applications with high current and low conduction losses. The device has a maximum drain voltage (VDS) of 60V, a gate voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. Its RDS(ON) exhibits excellent conduction performance at different gate drive voltages, and is particularly suitable for applications that require high power density and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. IPD031N06L3 G-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 97A
- **Technology**: Trench technology
- **Thermal resistance (RθJA)**: 62°C/W
- **Gate charge (Qg)**: 100nC
- **Switching time**:
- Turn-on time (ton): 16ns
- Turn-off time (toff): 55ns
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 97A
- **Technology**: Trench technology
- **Thermal resistance (RθJA)**: 62°C/W
- **Gate charge (Qg)**: 100nC
- **Switching time**:
- Turn-on time (ton): 16ns
- Turn-off time (toff): 55ns
Domain and module applications：
3. Application fields and modules of IPD031N06L3 G-VB
1. **Power tools**
The high current handling capability and low on-resistance of IPD031N06L3 G-VB make it very suitable for power control modules in power tools. Such applications usually require fast-response switching elements to ensure efficient energy transfer and reduce heat loss.
2. **Electric vehicles and hybrid systems**
In the automotive field, especially in battery management systems and motor control modules of electric and hybrid vehicles, this MOSFET can provide reliable conduction performance at higher currents. Its Trench technology can significantly reduce conduction losses and improve overall system efficiency.
3. **Power management for servers and data centers**
In high-performance servers and data centers, power management modules require extremely high power density and heat dissipation performance. The low RDS(ON) of IPD031N06L3 G-VB helps reduce losses and improve power conversion efficiency, making it very suitable for buck converters and PFC (power factor correction) modules in servers.
4. **DC-DC Converters and Power Modules**
In the design of DC-DC converters for industrial and consumer electronics, this MOSFET can effectively reduce switching losses and improve circuit efficiency. Its fast switching performance is suitable for high-frequency converters and meets the requirements of compact power supply designs.
1. **Power tools**
The high current handling capability and low on-resistance of IPD031N06L3 G-VB make it very suitable for power control modules in power tools. Such applications usually require fast-response switching elements to ensure efficient energy transfer and reduce heat loss.
2. **Electric vehicles and hybrid systems**
In the automotive field, especially in battery management systems and motor control modules of electric and hybrid vehicles, this MOSFET can provide reliable conduction performance at higher currents. Its Trench technology can significantly reduce conduction losses and improve overall system efficiency.
3. **Power management for servers and data centers**
In high-performance servers and data centers, power management modules require extremely high power density and heat dissipation performance. The low RDS(ON) of IPD031N06L3 G-VB helps reduce losses and improve power conversion efficiency, making it very suitable for buck converters and PFC (power factor correction) modules in servers.
4. **DC-DC Converters and Power Modules**
In the design of DC-DC converters for industrial and consumer electronics, this MOSFET can effectively reduce switching losses and improve circuit efficiency. Its fast switching performance is suitable for high-frequency converters and meets the requirements of compact power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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