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IPD031N03L G-VB Product details
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1. IPD031N03L G-VB Product Introduction
IPD031N03L G-VB is a single N-channel MOSFET in TO252 package, designed for high-efficiency low-voltage switching applications. The main feature of this device is the low on-resistance (RDS(ON)), i.e. 3mΩ at VGS=4.5V and 2mΩ at VGS=10V, ensuring excellent conduction performance under high current load. It can withstand a maximum drain-source voltage (VDS) of 30V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. In addition, the maximum drain current (ID) of 120A combined with its advanced Trench technology enables it to perform well in high-efficiency switching circuits.
IPD031N03L G-VB is a single N-channel MOSFET in TO252 package, designed for high-efficiency low-voltage switching applications. The main feature of this device is the low on-resistance (RDS(ON)), i.e. 3mΩ at VGS=4.5V and 2mΩ at VGS=10V, ensuring excellent conduction performance under high current load. It can withstand a maximum drain-source voltage (VDS) of 30V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. In addition, the maximum drain current (ID) of 120A combined with its advanced Trench technology enables it to perform well in high-efficiency switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD031N03L G-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench MOSFET technology
- **Operating frequency**: Up to hundreds of kHz, suitable for high-speed switching
- **Power dissipation**: The thermal resistance characteristics of the package determine its power dissipation capability
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench MOSFET technology
- **Operating frequency**: Up to hundreds of kHz, suitable for high-speed switching
- **Power dissipation**: The thermal resistance characteristics of the package determine its power dissipation capability
Domain and module applications：
3. Applicable fields and modules
1. **Power management module**:
IPD031N03L G-VB is very suitable for power management systems, especially in DC-DC converters, to provide efficient energy conversion. Due to its low on-resistance and high current handling capability, this MOSFET can be used in low-voltage, high-current power switching applications, such as computer power supplies, server power modules, etc.
2. **Motor control system**:
In the field of motor control, this MOSFET can efficiently control current and, with its current capability of up to 120A, is used in motor drive modules that require fast response, such as motor controllers in electric vehicles, brushless DC motor (BLDC) drive modules for household appliances, etc.
3. **Battery management system (BMS)**:
In battery management systems, IPD031N03L G-VB can be used for charging, discharging, and energy balancing modules. Its 30V withstand voltage and high current capability make it very suitable for protection and current distribution of lithium battery packs.
4. **LED lighting driver**:
Due to its efficient switching characteristics and low power consumption, this MOSFET is also suitable for LED lighting drivers, especially in high-brightness LED lamps that require precise current control to ensure energy efficiency and reliability.
The versatility and superior electrical characteristics of IPD031N03L G-VB make it an important player in the above-mentioned fields and suitable for various application environments that require high efficiency, low power consumption and high reliability.
1. **Power management module**:
IPD031N03L G-VB is very suitable for power management systems, especially in DC-DC converters, to provide efficient energy conversion. Due to its low on-resistance and high current handling capability, this MOSFET can be used in low-voltage, high-current power switching applications, such as computer power supplies, server power modules, etc.
2. **Motor control system**:
In the field of motor control, this MOSFET can efficiently control current and, with its current capability of up to 120A, is used in motor drive modules that require fast response, such as motor controllers in electric vehicles, brushless DC motor (BLDC) drive modules for household appliances, etc.
3. **Battery management system (BMS)**:
In battery management systems, IPD031N03L G-VB can be used for charging, discharging, and energy balancing modules. Its 30V withstand voltage and high current capability make it very suitable for protection and current distribution of lithium battery packs.
4. **LED lighting driver**:
Due to its efficient switching characteristics and low power consumption, this MOSFET is also suitable for LED lighting drivers, especially in high-brightness LED lamps that require precise current control to ensure energy efficiency and reliability.
The versatility and superior electrical characteristics of IPD031N03L G-VB make it an important player in the above-mentioned fields and suitable for various application environments that require high efficiency, low power consumption and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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