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IPD025N06N-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IPD025N06N-VB is a high-efficiency single N-channel MOSFET in TO252 package, suitable for high current load applications. The device adopts advanced Trench technology, providing extremely low on-resistance and high current handling capability, suitable for circuit design requiring high efficiency and low power consumption. Its 60V drain-source voltage (VDS) and 97A rated current (ID) enable it to operate under harsh working conditions.
IPD025N06N-VB is a high-efficiency single N-channel MOSFET in TO252 package, suitable for high current load applications. The device adopts advanced Trench technology, providing extremely low on-resistance and high current handling capability, suitable for circuit design requiring high efficiency and low power consumption. Its 60V drain-source voltage (VDS) and 97A rated current (ID) enable it to operate under harsh working conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **Rated current (ID)**: 97A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **Rated current (ID)**: 97A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Application fields and module examples:
- **Automotive electronics**: The high current handling capability and low on-resistance of the IPD025N06N-VB give it advantages in power management, DC-DC converters, and motor drive applications in automobiles. The device can be used in modules such as electric steering, fuel pump control, and fan drive.
- **Industrial power modules**: Due to its high current capacity and efficiency, this MOSFET is suitable for power modules in the industrial field, such as high-power power switches, battery management systems, inverters, and power conversion applications in solar and wind energy systems.
- **Consumer electronics and battery management**: In consumer electronics, this MOSFET can be used for battery management, load switching, and fast charging modules for portable devices to ensure more efficient power usage and thermal management.
- **Telecom equipment**: In communications and network equipment, the low on-resistance and high current handling capability of the IPD025N06N-VB enable it to be used in modules such as base station power supplies, server power supplies, and switching power supplies to improve system efficiency.
- **Automotive electronics**: The high current handling capability and low on-resistance of the IPD025N06N-VB give it advantages in power management, DC-DC converters, and motor drive applications in automobiles. The device can be used in modules such as electric steering, fuel pump control, and fan drive.
- **Industrial power modules**: Due to its high current capacity and efficiency, this MOSFET is suitable for power modules in the industrial field, such as high-power power switches, battery management systems, inverters, and power conversion applications in solar and wind energy systems.
- **Consumer electronics and battery management**: In consumer electronics, this MOSFET can be used for battery management, load switching, and fast charging modules for portable devices to ensure more efficient power usage and thermal management.
- **Telecom equipment**: In communications and network equipment, the low on-resistance and high current handling capability of the IPD025N06N-VB enable it to be used in modules such as base station power supplies, server power supplies, and switching power supplies to improve system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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