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IPD024N06N-VB Product details
Back to previous pageProduct introduction：
：**
IPD024N06N-VB is an N-channel power MOSFET in TO252 package with 60V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). It features advanced Trench technology, which provides an ultra-low on-resistance (RDS(ON)) of 4.5mΩ at VGS=10V and supports a drain current (ID) of up to 97A. This makes it suitable for efficient power management and high current switching applications, providing extremely low conduction losses.
**
IPD024N06N-VB is an N-channel power MOSFET in TO252 package with 60V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). It features advanced Trench technology, which provides an ultra-low on-resistance (RDS(ON)) of 4.5mΩ at VGS=10V and supports a drain current (ID) of up to 97A. This makes it suitable for efficient power management and high current switching applications, providing extremely low conduction losses.
**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
：**
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **Drain current (ID)**: 97A
- **Technology**: Trench technology
- **Power consumption**: Low conduction loss
**
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **Drain current (ID)**: 97A
- **Technology**: Trench technology
- **Power consumption**: Low conduction loss
**
Domain and module applications：
：**
1. **Automotive Electronic Systems**: IPD024N06N-VB is suitable for motor control, on-board power supply and lighting control modules in automobiles. Its low on-resistance and high current handling capability make it excel in electrical systems that require efficient current switching and thermal management.
2. **Power Management Modules**: In DC-DC converters, switch mode power supplies (SMPS) and UPS systems, this MOSFET can provide efficient power conversion, reduce losses, and enhance energy efficiency, especially for high power density applications.
3. **Industrial Automation**: Its high current handling capability and reliable switching performance are suitable for efficient power switching applications in industrial equipment such as motor drives and PLCs.
4. **Consumer Electronics Devices**: IPD024N06N-VB can be used in power management units (PMUs) of smart home appliances and mobile devices to improve energy efficiency and extend battery life.
This type of MOSFET is particularly suitable for high-performance power systems that require high efficiency and low power consumption due to its high current and low on-resistance characteristics.
1. **Automotive Electronic Systems**: IPD024N06N-VB is suitable for motor control, on-board power supply and lighting control modules in automobiles. Its low on-resistance and high current handling capability make it excel in electrical systems that require efficient current switching and thermal management.
2. **Power Management Modules**: In DC-DC converters, switch mode power supplies (SMPS) and UPS systems, this MOSFET can provide efficient power conversion, reduce losses, and enhance energy efficiency, especially for high power density applications.
3. **Industrial Automation**: Its high current handling capability and reliable switching performance are suitable for efficient power switching applications in industrial equipment such as motor drives and PLCs.
4. **Consumer Electronics Devices**: IPD024N06N-VB can be used in power management units (PMUs) of smart home appliances and mobile devices to improve energy efficiency and extend battery life.
This type of MOSFET is particularly suitable for high-performance power systems that require high efficiency and low power consumption due to its high current and low on-resistance characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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