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IPBH6N03LA G-VB Product details
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IPBH6N03LA G-VB MOSFET Product Introduction
The IPBH6N03LA G-VB is a high-performance single N-channel MOSFET in a TO263 package, suitable for applications requiring fast switching, high efficiency and low power consumption. The device has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, which, combined with its low on-resistance (RDS(ON)) and high current carrying capacity, makes it an ideal choice for power management and load switching applications. The IPBH6N03LA G-VB uses advanced trench technology to provide lower switching losses and higher efficiency.
The IPBH6N03LA G-VB is a high-performance single N-channel MOSFET in a TO263 package, suitable for applications requiring fast switching, high efficiency and low power consumption. The device has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, which, combined with its low on-resistance (RDS(ON)) and high current carrying capacity, makes it an ideal choice for power management and load switching applications. The IPBH6N03LA G-VB uses advanced trench technology to provide lower switching losses and higher efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Drain current (ID)**: 98A
- **Technology type**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Drain current (ID)**: 98A
- **Technology type**: Trench technology
Domain and module applications：
Applicable fields and application modules
IPBH6N03LA G-VB MOSFET is suitable for a variety of high-efficiency applications due to its low on-resistance and high current capability:
1. **Power management**: The device performs well in DC-DC converters, synchronous rectifiers and power factor correction (PFC) modules. Its low on-resistance and fast switching capability help improve energy efficiency and reduce energy loss.
2. **Motor drive**: The high current carrying capacity of this MOSFET makes it very suitable for use in motor drive modules, especially in power tools, electric vehicle controllers and other occasions that require fast response and high current.
3. **Load switch**: In load switch applications that require fast switching and high current carrying capacity, such as power distribution systems in servers and data centers, this MOSFET provides low loss and high efficiency.
4. **Consumer Electronics**: IPBH6N03LA G-VB is also widely used in battery management systems for laptops, smartphones and other portable devices, helping to optimize battery life and improve device energy efficiency.
Through its high performance and versatility, IPBH6N03LA G-VB excels in applications that require high efficiency, low loss and reliability.
IPBH6N03LA G-VB MOSFET is suitable for a variety of high-efficiency applications due to its low on-resistance and high current capability:
1. **Power management**: The device performs well in DC-DC converters, synchronous rectifiers and power factor correction (PFC) modules. Its low on-resistance and fast switching capability help improve energy efficiency and reduce energy loss.
2. **Motor drive**: The high current carrying capacity of this MOSFET makes it very suitable for use in motor drive modules, especially in power tools, electric vehicle controllers and other occasions that require fast response and high current.
3. **Load switch**: In load switch applications that require fast switching and high current carrying capacity, such as power distribution systems in servers and data centers, this MOSFET provides low loss and high efficiency.
4. **Consumer Electronics**: IPBH6N03LA G-VB is also widely used in battery management systems for laptops, smartphones and other portable devices, helping to optimize battery life and improve device energy efficiency.
Through its high performance and versatility, IPBH6N03LA G-VB excels in applications that require high efficiency, low loss and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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