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IPB90R340C3-VB Product details
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1. Product Introduction
The IPB90R340C3-VB is an N-channel power MOSFET in a TO263 package, designed for high voltage applications, with a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) rating of ±30V. The device uses Superjunction (SJ) and Multi-EPI technology to achieve high withstand voltage while maintaining low on-resistance (RDS(ON)), thereby improving power conversion efficiency. Its main features are high efficiency, low loss and excellent switching performance, suitable for applications such as high voltage power management and switch mode power supply (SMPS).
The IPB90R340C3-VB is an N-channel power MOSFET in a TO263 package, designed for high voltage applications, with a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) rating of ±30V. The device uses Superjunction (SJ) and Multi-EPI technology to achieve high withstand voltage while maintaining low on-resistance (RDS(ON)), thereby improving power conversion efficiency. Its main features are high efficiency, low loss and excellent switching performance, suitable for applications such as high voltage power management and switch mode power supply (SMPS).
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 20A | 270mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Parameter Description
- **Package: ** TO263
- **Configuration: ** Single-N-Channel
- **Drain-Source Voltage (VDS): ** 900V
- **Gate-Source Voltage (VGS): ** ±30V
- **Threshold Voltage (Vth): ** 3.5V
- **On-Resistance (RDS(ON)): ** 270mΩ @ VGS = 10V
- **Drain Current (ID): ** 20A
- **Technology: ** Superjunction (SJ) and Multi-EPI technology
- **Power Dissipation (Ptot): ** 300W
- **Operating Temperature Range (Tj): ** -55°C Up to 150°C
- **Package: ** TO263
- **Configuration: ** Single-N-Channel
- **Drain-Source Voltage (VDS): ** 900V
- **Gate-Source Voltage (VGS): ** ±30V
- **Threshold Voltage (Vth): ** 3.5V
- **On-Resistance (RDS(ON)): ** 270mΩ @ VGS = 10V
- **Drain Current (ID): ** 20A
- **Technology: ** Superjunction (SJ) and Multi-EPI technology
- **Power Dissipation (Ptot): ** 300W
- **Operating Temperature Range (Tj): ** -55°C Up to 150°C
Domain and module applications：
3. Application fields and modules
IPB90R340C3-VB MOSFET is mainly suitable for the following fields and modules:
- **Switching power supply (SMPS): ** In AC-DC and DC-DC conversion, this device can be used as a power switch at the high voltage end, which can efficiently convert electrical energy from the power supply to the voltage and current required by the device, especially suitable for high power density power supply design.
- **Solar inverter: ** In solar energy systems, this device can be used as a power switching device to convert DC power to AC power, support high voltage and reduce system conversion losses.
- **Industrial motor drive: ** Due to its high withstand voltage and low on-resistance, this MOSFET can be used in industrial motor drives, supporting efficient power management and motor control, especially medium and high power drives.
- **Uninterruptible power supply (UPS): ** Suitable for high power uninterruptible power supply equipment to ensure efficient conversion of backup power and maintain normal operation of the system when the power fails.
- **Electric Vehicle (EV) Chargers:** In electric vehicle charging systems, this MOSFET can be used for high-voltage side power management, supporting efficient fast charging applications.
The IPB90R340C3-VB is able to provide high efficiency, low loss switching characteristics in these applications, making it an ideal choice for high voltage, high power conversion applications.
IPB90R340C3-VB MOSFET is mainly suitable for the following fields and modules:
- **Switching power supply (SMPS): ** In AC-DC and DC-DC conversion, this device can be used as a power switch at the high voltage end, which can efficiently convert electrical energy from the power supply to the voltage and current required by the device, especially suitable for high power density power supply design.
- **Solar inverter: ** In solar energy systems, this device can be used as a power switching device to convert DC power to AC power, support high voltage and reduce system conversion losses.
- **Industrial motor drive: ** Due to its high withstand voltage and low on-resistance, this MOSFET can be used in industrial motor drives, supporting efficient power management and motor control, especially medium and high power drives.
- **Uninterruptible power supply (UPS): ** Suitable for high power uninterruptible power supply equipment to ensure efficient conversion of backup power and maintain normal operation of the system when the power fails.
- **Electric Vehicle (EV) Chargers:** In electric vehicle charging systems, this MOSFET can be used for high-voltage side power management, supporting efficient fast charging applications.
The IPB90R340C3-VB is able to provide high efficiency, low loss switching characteristics in these applications, making it an ideal choice for high voltage, high power conversion applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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