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IPB90N06S4L-04-VB Product details
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Product Introduction
**IPB90N06S4L-04-VB** is a high-performance N-Channel MOSFET in TO263 package and designed based on Trench technology. This MOSFET has a maximum drain-source voltage (VDS) of 60V and a maximum continuous current (ID) of 150A. Its on-resistance (RDS(ON)) is as low as 4mΩ when VGS=10V. This low on-resistance allows the MOSFET to maintain low power loss and high efficiency under high current conditions, making it ideal for applications that require high current switching and high efficiency.
**IPB90N06S4L-04-VB** is a high-performance N-Channel MOSFET in TO263 package and designed based on Trench technology. This MOSFET has a maximum drain-source voltage (VDS) of 60V and a maximum continuous current (ID) of 150A. Its on-resistance (RDS(ON)) is as low as 4mΩ when VGS=10V. This low on-resistance allows the MOSFET to maintain low power loss and high efficiency under high current conditions, making it ideal for applications that require high current switching and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management and switching circuits**:
**IPB90N06S4L-04-VB** performs well in power management applications. Its low on-resistance and high current carrying capacity make it particularly suitable for switching power supplies (SMPS), DC-DC converters, and power distribution systems. It can effectively reduce power loss, improve the energy efficiency of the overall system, and ensure stable operation of the power supply.
2. **Motor drive system**:
In motor drive systems, such as DC motors and stepper motors, **IPB90N06S4L-04-VB** provides the necessary high current handling capability and low power loss. Its efficient switching performance helps improve the efficiency of motor drives, reduce system heat generation, and enhance the stability and reliability of motor control.
3. **Automotive electronic systems**:
This MOSFET is also suitable for automotive electronic applications, such as electric power steering systems (EPS) and electric seat controls. **IPB90N06S4L-04-VB**'s high current capability and low on-resistance can ensure efficient operation of automotive electronic systems, reduce heat generation, and improve the overall performance of automotive electronic equipment.
4. **High Power Load Switch**:
**IPB90N06S4L-04-VB** is very suitable for use as a high power load switch, such as battery protection circuits and overcurrent protection systems. Its low on-resistance and high current handling capability can effectively control the load, protect the circuit from overload and short circuit, and improve the reliability and safety of the system.
1. **Power management and switching circuits**:
**IPB90N06S4L-04-VB** performs well in power management applications. Its low on-resistance and high current carrying capacity make it particularly suitable for switching power supplies (SMPS), DC-DC converters, and power distribution systems. It can effectively reduce power loss, improve the energy efficiency of the overall system, and ensure stable operation of the power supply.
2. **Motor drive system**:
In motor drive systems, such as DC motors and stepper motors, **IPB90N06S4L-04-VB** provides the necessary high current handling capability and low power loss. Its efficient switching performance helps improve the efficiency of motor drives, reduce system heat generation, and enhance the stability and reliability of motor control.
3. **Automotive electronic systems**:
This MOSFET is also suitable for automotive electronic applications, such as electric power steering systems (EPS) and electric seat controls. **IPB90N06S4L-04-VB**'s high current capability and low on-resistance can ensure efficient operation of automotive electronic systems, reduce heat generation, and improve the overall performance of automotive electronic equipment.
4. **High Power Load Switch**:
**IPB90N06S4L-04-VB** is very suitable for use as a high power load switch, such as battery protection circuits and overcurrent protection systems. Its low on-resistance and high current handling capability can effectively control the load, protect the circuit from overload and short circuit, and improve the reliability and safety of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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