中文
English
IPB80P04P4L-08-VB Product details
Back to previous pageProduct introduction：
Product Introduction
IPB80P04P4L-08-VB is a high-performance single P-channel MOSFET in TO263 package, designed for high current and high efficiency applications. This MOSFET has a maximum drain-source voltage (VDS) of -40V and a maximum source current (ID) of -110A. Its on-resistance is 8.28mΩ at a gate drive voltage of 4.5V and 4.1mΩ at 10V. Using Trench technology, this MOSFET provides excellent performance under low resistance and high current conditions, and is ideal for applications requiring high efficiency and high reliability.
IPB80P04P4L-08-VB is a high-performance single P-channel MOSFET in TO263 package, designed for high current and high efficiency applications. This MOSFET has a maximum drain-source voltage (VDS) of -40V and a maximum source current (ID) of -110A. Its on-resistance is 8.28mΩ at a gate drive voltage of 4.5V and 4.1mΩ at 10V. Using Trench technology, this MOSFET provides excellent performance under low resistance and high current conditions, and is ideal for applications requiring high efficiency and high reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | 4.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 8.28mΩ
- @ VGS = 10V: 4.1mΩ
- **Maximum source current (ID)**: -110A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 8.28mΩ
- @ VGS = 10V: 4.1mΩ
- **Maximum source current (ID)**: -110A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
1. **Power Management and DC-DC Converters**:
- In power management systems and DC-DC converters, the IPB80P04P4L-08-VB MOSFET provides efficient current management as a load switch. Its low on-resistance helps reduce power consumption and improve conversion efficiency, and is particularly suitable for power modules that require high load capacity.
2. **Load Switch and Battery Protection**:
- This MOSFET can be used in load switch and battery protection circuits to provide efficient current switching functions through its low on-resistance. It is able to handle high current loads while protecting the battery from overcurrent and overvoltage damage, ensuring the safety and reliability of the battery system.
3. **Power Amplifier Circuit**:
- In power amplifier circuits, the IPB80P04P4L-08-VB MOSFET is able to provide high current output while maintaining low power loss. This makes it ideal for applications such as audio amplifiers and RF amplifiers that require efficient power switching.
4. **Electric Vehicle Control System**:
- In the control system of electric vehicles, the IPB80P04P4L-08-VB can be used to drive motors and control battery systems. It is capable of handling high currents and provides stable performance under various operating conditions, supporting the efficient operation of electric vehicles.
5. **Industrial Power Control**:
- This MOSFET provides efficient switching performance in industrial power control systems and is suitable for industrial applications that require high current control. It is capable of handling high current loads and provides stable and reliable power control.
The high current handling capability and low on-resistance of the IPB80P04P4L-08-VB MOSFET enable it to perform well in a variety of high-power applications, providing an ideal solution for a variety of high-efficiency power management and control systems.
1. **Power Management and DC-DC Converters**:
- In power management systems and DC-DC converters, the IPB80P04P4L-08-VB MOSFET provides efficient current management as a load switch. Its low on-resistance helps reduce power consumption and improve conversion efficiency, and is particularly suitable for power modules that require high load capacity.
2. **Load Switch and Battery Protection**:
- This MOSFET can be used in load switch and battery protection circuits to provide efficient current switching functions through its low on-resistance. It is able to handle high current loads while protecting the battery from overcurrent and overvoltage damage, ensuring the safety and reliability of the battery system.
3. **Power Amplifier Circuit**:
- In power amplifier circuits, the IPB80P04P4L-08-VB MOSFET is able to provide high current output while maintaining low power loss. This makes it ideal for applications such as audio amplifiers and RF amplifiers that require efficient power switching.
4. **Electric Vehicle Control System**:
- In the control system of electric vehicles, the IPB80P04P4L-08-VB can be used to drive motors and control battery systems. It is capable of handling high currents and provides stable performance under various operating conditions, supporting the efficient operation of electric vehicles.
5. **Industrial Power Control**:
- This MOSFET provides efficient switching performance in industrial power control systems and is suitable for industrial applications that require high current control. It is capable of handling high current loads and provides stable and reliable power control.
The high current handling capability and low on-resistance of the IPB80P04P4L-08-VB MOSFET enable it to perform well in a variety of high-power applications, providing an ideal solution for a variety of high-efficiency power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
