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IPB80P04P4L-04-VB Product details
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Product Introduction:
IPB80P04P4L-04-VB is a high-performance P-channel MOSFET in TO263 package, designed for high current and low power applications. It has a maximum drain-source voltage (VDS) of -40V and a gate-source voltage (VGS) of ±20V, and can handle drain currents up to -110A. The on-resistance (RDS(ON)) of this MOSFET is 4.1mΩ at VGS of 10V and 8.28mΩ at VGS of 4.5V. Using Trench technology, it provides excellent conductivity and low power consumption, making it suitable for a variety of high-efficiency switching and power management applications.
IPB80P04P4L-04-VB is a high-performance P-channel MOSFET in TO263 package, designed for high current and low power applications. It has a maximum drain-source voltage (VDS) of -40V and a gate-source voltage (VGS) of ±20V, and can handle drain currents up to -110A. The on-resistance (RDS(ON)) of this MOSFET is 4.1mΩ at VGS of 10V and 8.28mΩ at VGS of 4.5V. Using Trench technology, it provides excellent conductivity and low power consumption, making it suitable for a variety of high-efficiency switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | 4.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 4.1mΩ @ VGS=10V
- 8.28mΩ @ VGS=4.5V
- **Drain current (ID)**: -110A
- **Technology**: Trench technology with low conduction loss and high current handling capability
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 4.1mΩ @ VGS=10V
- 8.28mΩ @ VGS=4.5V
- **Drain current (ID)**: -110A
- **Technology**: Trench technology with low conduction loss and high current handling capability
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
Domain and module applications：
Applicable fields and module applications:
1. **High-efficiency power management**:
IPB80P04P4L-04-VB excels in high-efficiency power management systems, especially where low on-resistance and high current handling capability are required. For example, it can be used in high-efficiency DC-DC converters and power switches to help reduce energy loss and improve overall system efficiency.
2. **Electric vehicle (EV) power management**:
In electric vehicles, this MOSFET is suitable for battery management systems and high-current power switches. Its low on-resistance and high current capability enable it to perform well in battery charging and discharging and motor control, helping to improve the overall performance and energy efficiency of electric vehicles.
3. **Load switch**:
IPB80P04P4L-04-VB can be used as a high-power load switch in a variety of industrial and consumer electronic devices. Its low on-resistance characteristics ensure high efficiency under high load conditions, reduce power loss, and improve the stability and life of the equipment.
4. **Motor drive module**:
In motor drive applications, IPB80P04P4L-04-VB can be used as a high current switching element to control the start, stop and speed of the motor. Its high current handling capability and low power loss characteristics can improve the performance of motor drives and are suitable for applications such as industrial motors and automotive motors.
5. **Power converter**:
This MOSFET can be used as a switching element in power converters, such as in AC-DC converters or DC-AC inverters. Its low on-resistance and high current capability help improve the efficiency of the converter and reduce energy losses, making it suitable for a variety of power conversion applications.
With its high current capability and low conduction loss, IPB80P04P4L-04-VB is suitable for a wide range of applications, including power management, electric vehicles, motor control and power conversion.
1. **High-efficiency power management**:
IPB80P04P4L-04-VB excels in high-efficiency power management systems, especially where low on-resistance and high current handling capability are required. For example, it can be used in high-efficiency DC-DC converters and power switches to help reduce energy loss and improve overall system efficiency.
2. **Electric vehicle (EV) power management**:
In electric vehicles, this MOSFET is suitable for battery management systems and high-current power switches. Its low on-resistance and high current capability enable it to perform well in battery charging and discharging and motor control, helping to improve the overall performance and energy efficiency of electric vehicles.
3. **Load switch**:
IPB80P04P4L-04-VB can be used as a high-power load switch in a variety of industrial and consumer electronic devices. Its low on-resistance characteristics ensure high efficiency under high load conditions, reduce power loss, and improve the stability and life of the equipment.
4. **Motor drive module**:
In motor drive applications, IPB80P04P4L-04-VB can be used as a high current switching element to control the start, stop and speed of the motor. Its high current handling capability and low power loss characteristics can improve the performance of motor drives and are suitable for applications such as industrial motors and automotive motors.
5. **Power converter**:
This MOSFET can be used as a switching element in power converters, such as in AC-DC converters or DC-AC inverters. Its low on-resistance and high current capability help improve the efficiency of the converter and reduce energy losses, making it suitable for a variety of power conversion applications.
With its high current capability and low conduction loss, IPB80P04P4L-04-VB is suitable for a wide range of applications, including power management, electric vehicles, motor control and power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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